STD9NM40N STMicroelectronics, STD9NM40N Datasheet - Page 5

• Manufacturer Part Number: STD9NM40N
• Description: MOSFET N-Ch 400V 0.73Ohm 5.6A pwr Mdmesh II
• Manufacturer: STMicroelectronics

Specifications of STD9NM40N

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 400 V
• Gate-source Breakdown Voltage: 25 V
• Continuous Drain Current: 5.6 A
• Resistance Drain-source Rds (on): 0.79 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: D2PAK
• Fall Time: 8.8 ns
• Gate Charge Qg: 14 nC
• Power Dissipation: 60 W
• Rise Time: 4.4 ns
• Typical Turn-off Delay Time: 25 ns

STD9NM40N, STP9NM40N
Table 7.
Table 8.
1. Pulse width limited by safe operating area.
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Symbol
Symbol
I
V
SDM
t
t
I
I
SD
d(on)
d(off)
RRM
RRM
I
Q
Q
SD
t
t
t
t
rr
rr
r
f
rr
rr
(2)
(1)
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Switching times
Source drain diode
Parameter
Parameter
Doc ID 023762 Rev 2
I
I
V
I
V
(see
V
R
(see
SD
SD
SD
DD
DD
DD
G
= 4.7 Ω, V
= 5.6 A, V
= 5.6 A, di/dt = 100 A/µs
= 5.6 A, di/dt = 100 A/µs
= 200 V, I
= 60 V (see
= 60 V, T
Figure
Figure
Test conditions
Test conditions
16)
21)
GS
j
D
GS
= 150 °C
= 5.6 A,
= 0
Figure
= 10 V
21)
Electrical characteristics
Min.
Min.
-
-
-
-
-
Typ.
Typ.
187
224
4.4
8.8
1.3
1.5
25
14
13
7
Max. Unit
Max
22.4
5.6
1.5
-
Unit
µC
µC
ns
ns
ns
ns
5/18
ns
ns
A
A
V
A
A