STD9NM40N STMicroelectronics, STD9NM40N Datasheet - Page 6

• Manufacturer Part Number: STD9NM40N
• Description: MOSFET N-Ch 400V 0.73Ohm 5.6A pwr Mdmesh II
• Manufacturer: STMicroelectronics

Specifications of STD9NM40N

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 400 V
• Gate-source Breakdown Voltage: 25 V
• Continuous Drain Current: 5.6 A
• Resistance Drain-source Rds (on): 0.79 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: D2PAK
• Fall Time: 8.8 ns
• Gate Charge Qg: 14 nC
• Power Dissipation: 60 W
• Rise Time: 4.4 ns
• Typical Turn-off Delay Time: 25 ns

Electrical characteristics
2.1
6/18
Figure 2.
Figure 4.
Figure 6.
0.1
0.1
(A)
(A)
10
10
I
I
D
D
1
1
0.1
0.1
(A)
10
I
D
2
8
6
4
0
0
Electrical characteristics (curves)
Safe operating area for DPAK
Safe operating area for TO-220
Output characteristics
2
1
1
4
6
8
10
10
Tc=25°C
Tj=150°C
Single pulse
10
V
12 14 16 18
GS
=10V
100
100
V
V
DS
DS
(V)
(V)
Doc ID 023762 Rev 2
100µs
100µs
10µs
1ms
10ms
10µs
1ms
10ms
Tc=25°C
Tj=150°C
Single pulse
AM16303v1
AM15517v1
AM16304v1
V
6V
5V
DS
(V)
Figure 3.
Figure 5.
Figure 7.
(A)
10
I
D
8
4
2
6
0
0
Thermal impedance for DPAK
Thermal impedance for TO-220
Transfer characteristics
2
V
DS
STD9NM40N, STP9NM40N
4
=20V
6
8
V
AM16305v1
GS
(V)