PSMN3R3-60PLQ NXP Semiconductors, PSMN3R3-60PLQ Datasheet - Page 9

• Manufacturer Part Number: PSMN3R3-60PLQ
• Description: MOSFET N-Channel MOSFET
• Manufacturer: NXP Semiconductors

Specifications of PSMN3R3-60PLQ

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 60 V
• Continuous Drain Current: 130 A
• Resistance Drain-source Rds (on): 7.5 mOhms
• Mounting Style: Through Hole
• Package / Case: TO-220AB
• Fall Time: 109 ns
• Gate Charge Qg: 175 nC
• Power Dissipation: 293 W
• Rise Time: 100 ns
• Typical Turn-off Delay Time: 158 ns

NXP Semiconductors
PSMN3R3-60PL
Product data sheet
Fig. 16. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values
400
(A)
300
200
100
I
S
0
0
All information provided in this document is subject to legal disclaimers.
0.5
7 February 2013
T
j
= 175 ° C
N-channel 60 V, 3.4 mΩ logic level MOSFET in SOT78
1
T
j
= 25 ° C
V
SD
003aah539
(V)
1.5
PSMN3R3-60PL
© NXP B.V. 2013. All rights reserved
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