PSMN3R3-60PLQ NXP Semiconductors, PSMN3R3-60PLQ Datasheet - Page 8

• Manufacturer Part Number: PSMN3R3-60PLQ
• Description: MOSFET N-Channel MOSFET
• Manufacturer: NXP Semiconductors

Specifications of PSMN3R3-60PLQ

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 60 V
• Continuous Drain Current: 130 A
• Resistance Drain-source Rds (on): 7.5 mOhms
• Mounting Style: Through Hole
• Package / Case: TO-220AB
• Fall Time: 109 ns
• Gate Charge Qg: 175 nC
• Power Dissipation: 293 W
• Rise Time: 100 ns
• Typical Turn-off Delay Time: 158 ns

NXP Semiconductors
PSMN3R3-60PL
Product data sheet
Fig. 12. Normalized drain-source on-state resistance
Fig. 14. Gate-source voltage as a function of gate
V
(V)
a
GS
2.4
1.8
1.2
0.6
10
0
8
6
4
2
0
factor as a function of junction temperature
charge; typical values
-60
0
0
60
14 V
60
V
DS
120
= 48V
120
Q
All information provided in this document is subject to legal disclaimers.
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T
(nC)
j
( ° C)
180
180
7 February 2013
N-channel 60 V, 3.4 mΩ logic level MOSFET in SOT78
Fig. 13. Gate charge waveform definitions
Fig. 15. Input, output and reverse transfer capacitances
(pF)
10
C
10
10
10
5
4
3
2
10
as a function of drain-source voltage; typical
values
V
-1
V
V
V
GS(pl)
DS
GS(th)
GS
Q
GS1
1
I
Q
D
GS
Q
GS2
Q
G(tot)
PSMN3R3-60PL
Q
GD
10
V
© NXP B.V. 2013. All rights reserved
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DS
003aaa508
(V)
C
C
C
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10
2
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