PSMN3R3-60PLQ NXP Semiconductors, PSMN3R3-60PLQ Datasheet - Page 3

• Manufacturer Part Number: PSMN3R3-60PLQ
• Description: MOSFET N-Channel MOSFET
• Manufacturer: NXP Semiconductors

Specifications of PSMN3R3-60PLQ

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 60 V
• Continuous Drain Current: 130 A
• Resistance Drain-source Rds (on): 7.5 mOhms
• Mounting Style: Through Hole
• Package / Case: TO-220AB
• Fall Time: 109 ns
• Gate Charge Qg: 175 nC
• Power Dissipation: 293 W
• Rise Time: 100 ns
• Typical Turn-off Delay Time: 158 ns

NXP Semiconductors
PSMN3R3-60PL
Product data sheet
Symbol
Fig. 1.
P
T
T
Source-drain diode
I
I
Avalanche ruggedness
E
S
SM
stg
j
tot
DS(AL)S
(A)
(A)
I
I
D
D
200
160
120
(1) Capped at 130A due to package
Continuous drain current as a function of
mounting base temperature
80
40
0
0
Parameter
total power dissipation
storage temperature
junction temperature
source current
peak source current
non-repetitive drain-source
avalanche energy
30
[1]
(1)
(1)
60
Continuous current is limited by package.
90
120
All information provided in this document is subject to legal disclaimers.
T
j
150
(°C)
003aak803
Conditions
T
T
pulsed; t
I
V
Fig. 3
D
180
mb
mb
GS
= 130 A; V
7 February 2013
= 25 °C;
= 25 °C
= 10 V; T
p
≤ 10 µs; T
N-channel 60 V, 3.4 mΩ logic level MOSFET in SOT78
Fig. 2.
sup
Fig. 2
j(init)
≤ 60 V; R
P
(%)
der
= 25 °C; unclamped;
120
80
40
mb
0
Normalized total power dissipation as a
function of mounting base temperature
0
= 25 °C
GS
= 50 Ω;
50
100
[1]
PSMN3R3-60PL
Min
-
-55
-55
-
-
-
150
© NXP B.V. 2013. All rights reserved
T
mb
03aa16
Max
(°C)
293
175
175
130
793
372
200
Unit
W
°C
°C
A
A
mJ
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