PSMN3R3-60PLQ NXP Semiconductors, PSMN3R3-60PLQ Datasheet - Page 2

• Manufacturer Part Number: PSMN3R3-60PLQ
• Description: MOSFET N-Channel MOSFET
• Manufacturer: NXP Semiconductors

Specifications of PSMN3R3-60PLQ

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 60 V
• Continuous Drain Current: 130 A
• Resistance Drain-source Rds (on): 7.5 mOhms
• Mounting Style: Through Hole
• Package / Case: TO-220AB
• Fall Time: 109 ns
• Gate Charge Qg: 175 nC
• Power Dissipation: 293 W
• Rise Time: 100 ns
• Typical Turn-off Delay Time: 158 ns

NXP Semiconductors
5. Pinning information
Table 2.
6. Ordering information
Table 3.
7. Marking
Table 4.
8. Limiting values
Table 5.
In accordance with the Absolute Maximum Rating System (IEC 60134).
PSMN3R3-60PL
Product data sheet
Pin
Type number
Type number
Symbol
1
2
3
PSMN3R3-60PL
PSMN3R3-60PL
V
V
V
I
I
D
DM
DS
DGR
GS
Symbol Description
G
D
S
Pinning information
Ordering information
Marking codes
Limiting values
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
gate
drain
source
Package
Name
TO-220AB
Description
All information provided in this document is subject to legal disclaimers.
plastic single-ended package; heatsink mounted; 1 mounting
hole; 3-lead TO-220AB
Conditions
T
R
T
T
T
j
mb
mb
mb
Simplified outline
GS
≥ 25 °C; T
7 February 2013
= 25 °C; V
= 100 °C; V
= 25 °C; pulsed; t
= 20 kΩ
TO-220AB (SOT78)
N-channel 60 V, 3.4 mΩ logic level MOSFET in SOT78
Marking code
PSMN3R3-60PL
j
≤ 175 °C
1 2
GS
mb
GS
= 10 V;
3
= 10 V;
p
≤ 10 µs;
Fig. 1
Fig. 1
Fig. 4
Graphic symbol
[1]
[1]
PSMN3R3-60PL
mbb076
G
Min
-
-
-20
-
-
-
© NXP B.V. 2013. All rights reserved
D
S
Version
Max
SOT78
60
60
20
130
130
793
Unit
V
V
V
A
A
A
2 / 13