PSMN3R3-60PLQ NXP Semiconductors, PSMN3R3-60PLQ Datasheet - Page 7

• Manufacturer Part Number: PSMN3R3-60PLQ
• Description: MOSFET N-Channel MOSFET
• Manufacturer: NXP Semiconductors

Specifications of PSMN3R3-60PLQ

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 60 V
• Continuous Drain Current: 130 A
• Resistance Drain-source Rds (on): 7.5 mOhms
• Mounting Style: Through Hole
• Package / Case: TO-220AB
• Fall Time: 109 ns
• Gate Charge Qg: 175 nC
• Power Dissipation: 293 W
• Rise Time: 100 ns
• Typical Turn-off Delay Time: 158 ns

NXP Semiconductors
PSMN3R3-60PL
Product data sheet
Fig. 8.
Fig. 10. Sub-threshold drain current as a function of
(A)
I
D
10
10
10
10
10
10
(A)
I
400
300
200
100
D
-1
-2
-3
-4
-5
-6
0
Transfer characteristics; drain current as a
function of gate-source voltage; typical values
gate-source voltage
0
0
1
T
j
= 175 ° C
1
min
2
3
typ
T
j
2
= 25 ° C
max
V
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4
003aah532
003aah026
GS
V
GS
(V)
(V)
3
5
7 February 2013
N-channel 60 V, 3.4 mΩ logic level MOSFET in SOT78
Fig. 9.
Fig. 11. Drain-source on-state resistance as a function
V
GS(th)
(V)
R
(m Ω )
DSon
2.5
1.5
0.5
15
10
3
2
1
0
5
0
Gate-source threshold voltage as a function of
junction temperature
T
of drain current; typical values
-60
0
j
= 25 °C; t
2.6
100
0
p
= 300 μs
2.8
max
typ
min
200
60
PSMN3R3-60PL
3
120
300
V
GS
© NXP B.V. 2013. All rights reserved
003aah835
T
003aah025
(V) = 10
j
I
D
( ° C)
(A)
3.5
4.5
180
400
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