PSMN3R3-60PLQ NXP Semiconductors, PSMN3R3-60PLQ Datasheet - Page 6

• Manufacturer Part Number: PSMN3R3-60PLQ
• Description: MOSFET N-Channel MOSFET
• Manufacturer: NXP Semiconductors

Specifications of PSMN3R3-60PLQ

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 60 V
• Continuous Drain Current: 130 A
• Resistance Drain-source Rds (on): 7.5 mOhms
• Mounting Style: Through Hole
• Package / Case: TO-220AB
• Fall Time: 109 ns
• Gate Charge Qg: 175 nC
• Power Dissipation: 293 W
• Rise Time: 100 ns
• Typical Turn-off Delay Time: 158 ns

NXP Semiconductors
PSMN3R3-60PL
Product data sheet
Symbol
Fig. 6.
Dynamic characteristics
Q
Q
Q
C
C
C
t
t
t
t
Source-drain diode
V
t
Q
d(on)
r
d(off)
f
rr
SD
iss
oss
rss
G(tot)
GS
GD
r
(A)
360
240
120
I
D
0
T
Output characteristics; drain current as a
function of drain-source voltage; typical values
0
j
= 25 °C; t
V
GS
(V) = 10
Parameter
total gate charge
gate-source charge
gate-drain charge
input capacitance
output capacitance
reverse transfer
capacitance
turn-on delay time
rise time
turn-off delay time
fall time
source-drain voltage
reverse recovery time
recovered charge
p
= 300 μs
1
4.5
3.5
2
V
Conditions
All information provided in this document is subject to legal disclaimers.
I
Fig.
I
Fig.
V
T
V
R
I
I
V
DS
D
D
S
S
003aah529
j
GS
DS
DS
G(ext)
= 25 °C;
= 25 A; V
= 20 A; dI
= 25 A; V
= 25 A; V
(V)
13;
13;
= 45 V; R
= 25 V
= 0 V; V
2.4
2.8
2.6
3
= 5 Ω
3
Fig. 14
Fig. 14
Fig. 15
DS
DS
GS
S
7 February 2013
DS
/dt = -100 A/µs; V
L
= 48 V; V
= 48 V; V
= 0 V; T
= 1.8 Ω; V
= 25 V; f = 1 MHz;
N-channel 60 V, 3.4 mΩ logic level MOSFET in SOT78
Fig. 7.
j
= 25 °C;
GS
GS
R
(m Ω )
GS
DSon
= 5 V;
= 10 V;
15
10
= 5 V;
5
0
Drain-source on-state resistance as a function
of gate-source voltage; typical values
0
GS
Fig. 16
= 0 V;
2.5
Min
-
-
-
-
-
-
-
-
-
-
-
-
-
-
5
PSMN3R3-60PL
Typ
95
175
20
31
10115 -
822
427
54.2
100
158
109
0.78
43
67
7.5
© NXP B.V. 2013. All rights reserved
003aah830
V
GS
Max
-
-
-
-
-
-
-
-
-
-
1.2
-
-
(V)
10
Unit
nC
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
V
ns
nC
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