PSMN3R3-60PLQ NXP Semiconductors, PSMN3R3-60PLQ Datasheet - Page 5

• Manufacturer Part Number: PSMN3R3-60PLQ
• Description: MOSFET N-Channel MOSFET
• Manufacturer: NXP Semiconductors

Specifications of PSMN3R3-60PLQ

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 60 V
• Continuous Drain Current: 130 A
• Resistance Drain-source Rds (on): 7.5 mOhms
• Mounting Style: Through Hole
• Package / Case: TO-220AB
• Fall Time: 109 ns
• Gate Charge Qg: 175 nC
• Power Dissipation: 293 W
• Rise Time: 100 ns
• Typical Turn-off Delay Time: 158 ns

NXP Semiconductors
10. Characteristics
Table 7.
PSMN3R3-60PL
Product data sheet
Fig. 5.
Symbol
Static characteristics
V
V
I
I
R
R
DSS
GSS
(BR)DSS
GS(th)
DSon
G
Z
(K/W)
th(j-mb)
10
10
10
-1
-2
-3
1
10
Transient thermal impedance from junction to mounting base as a function of pulse duration
-6
δ = 0.5
single shot
0.2
0.1
0.05
Characteristics
0.02
Parameter
drain-source
breakdown voltage
gate-source threshold
voltage
drain leakage current
gate leakage current
drain-source on-state
resistance
gate resistance
10
-5
Conditions
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I
I
I
Fig.
I
Fig. 9
I
Fig. 9
V
V
V
V
V
Fig. 11
V
Fig. 11
V
Fig.
f = 1 MHz
D
D
D
D
D
10
DS
DS
GS
GS
GS
GS
GS
= 250 µA; V
= 250 µA; V
= 1 mA; V
= 1 mA; V
= 1 mA; V
-4
9;
12;
= 60 V; V
= 60 V; V
= 16 V; V
= -16 V; V
= 4.5 V; I
= 10 V; I
= 10 V; I
Fig. 10
Fig. 11
7 February 2013
DS
DS
DS
D
D
D
GS
GS
DS
GS
GS
DS
= 25 A; T
= 25 A; T
= V
= V
= V
= 25 A; T
= 0 V; T
= 0 V; T
= 0 V; T
= 0 V; T
= 0 V; T
= 0 V; T
10
N-channel 60 V, 3.4 mΩ logic level MOSFET in SOT78
GS
GS
GS
-3
; T
; T
; T
j
j
j
j
j
j
j
j
j
= 25 °C;
= -55 °C;
= 175 °C;
= 25 °C;
= 175 °C;
j
j
j
= 25 °C;
= 175 °C
= 25 °C
= 25 °C
= 25 °C
= -55 °C
= 25 °C
10
-2
Min
60
54
1.4
-
0.5
-
-
-
-
-
-
-
0.5
10
PSMN3R3-60PL
P
-1
t
Typ
p
-
-
1.7
-
-
-
0.09
2
2
3
2.7
-
1
T
t
© NXP B.V. 2013. All rights reserved
p
003aah288
(s)
δ =
Max
-
-
2.1
2.45
-
500
1
100
100
3.8
3.4
7.5
2
T
t
p
t
1
Unit
V
V
V
V
V
µA
µA
nA
nA
mΩ
mΩ
mΩ
Ω
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