PSMN009-100B /T3 NXP Semiconductors, PSMN009-100B /T3 Datasheet - Page 11

• Manufacturer Part Number: PSMN009-100B /T3
• Description: MOSFET TAPE13 PWR-MOS
• Manufacturer: NXP Semiconductors

Specifications of PSMN009-100B /T3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 75 A
• Resistance Drain-source Rds (on): 0.0088 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-404
• Fall Time: 43 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 230 W
• Rise Time: 59 ns
• Factory Pack Quantity: 800
• Typical Turn-off Delay Time: 120 ns
• Part # Aliases: PSMN009-100B,118

NXP Semiconductors
8. Revision history
Table 7.
PSMN009-100B_2
Product data sheet
Document ID
PSMN009-100B_2
Modifications:
PSMN009_100P_100B-01
Revision history
Release date Data sheet status
20090706
20020429
•
•
•
The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
Legal texts have been adapted to the new company name where appropriate.
Type number PSMN009-100B separated from data sheet PSMN009_100P_100B-01.
Product data sheet
Product data
Rev. 02 — 6 July 2009
N-channel TrenchMOS SiliconMAX standard level FET
Change notice
-
-
PSMN009-100B
Supersedes
PSMN009_100P_100B-01
-
© NXP B.V. 2009. All rights reserved.
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