PSMN009-100B /T3 NXP Semiconductors, PSMN009-100B /T3 Datasheet - Page 4

• Manufacturer Part Number: PSMN009-100B /T3
• Description: MOSFET TAPE13 PWR-MOS
• Manufacturer: NXP Semiconductors

Specifications of PSMN009-100B /T3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 75 A
• Resistance Drain-source Rds (on): 0.0088 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-404
• Fall Time: 43 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 230 W
• Rise Time: 59 ns
• Factory Pack Quantity: 800
• Typical Turn-off Delay Time: 120 ns
• Part # Aliases: PSMN009-100B,118

NXP Semiconductors
PSMN009-100B_2
Product data sheet
Fig 3.
(A)
I
D
10
10
10
1
3
2
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
1
Limit R
DSon
= V
DS
/I
D
10
DC
Rev. 02 — 6 July 2009
N-channel TrenchMOS SiliconMAX standard level FET
10
2
t
100 µs
1 ms
10 ms
100 ms
p
= 10 µs
PSMN009-100B
V
DS
(V)
© NXP B.V. 2009. All rights reserved.
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