PSMN009-100B /T3 NXP Semiconductors, PSMN009-100B /T3 Datasheet - Page 7

• Manufacturer Part Number: PSMN009-100B /T3
• Description: MOSFET TAPE13 PWR-MOS
• Manufacturer: NXP Semiconductors

Specifications of PSMN009-100B /T3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 75 A
• Resistance Drain-source Rds (on): 0.0088 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-404
• Fall Time: 43 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 230 W
• Rise Time: 59 ns
• Factory Pack Quantity: 800
• Typical Turn-off Delay Time: 120 ns
• Part # Aliases: PSMN009-100B,118

NXP Semiconductors
PSMN009-100B_2
Product data sheet
Fig 5.
Fig 7.
(A)
(A)
I
I
10
10
10
10
10
10
D
D
50
40
30
20
10
−1
−2
−3
−4
−5
−6
0
function of drain-source voltage; typical values
gate-source voltage
Output characteristics: drain current as a
Sub-threshold drain current as a function of
0
0
T
j
= 25 °C
0.2
2
0.4
min
10 V
0.6
typ
4
6 V 5.6 V 5.4 V
V
max
5.6 V
5.6 V
V
GS
0.8
GS
V
= 4.2 V
(V)
DS
03am54
03aa35
5.2 V
4.8 V
4.6 V
4.4 V
5 V
(V)
1
6
Rev. 02 — 6 July 2009
N-channel TrenchMOS SiliconMAX standard level FET
Fig 6.
Fig 8.
V
GS(th)
(V)
(A)
I
D
80
60
40
20
0
5
4
3
2
1
0
−60
function of gate-source voltage; typical values
junction temperature
Transfer characteristics: drain current as a
Gate-source threshold voltage as a function of
0
V
DS
> I
D
x R
0
DSon
2
PSMN009-100B
60
175 °C
max
min
typ
4
120
© NXP B.V. 2009. All rights reserved.
V
T
GS
j
T
= 25 °C
j
(°C)
03am56
(V)
03aa32
180
6
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