PSMN009-100B /T3 NXP Semiconductors, PSMN009-100B /T3 Datasheet - Page 9

• Manufacturer Part Number: PSMN009-100B /T3
• Description: MOSFET TAPE13 PWR-MOS
• Manufacturer: NXP Semiconductors

Specifications of PSMN009-100B /T3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 75 A
• Resistance Drain-source Rds (on): 0.0088 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-404
• Fall Time: 43 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 230 W
• Rise Time: 59 ns
• Factory Pack Quantity: 800
• Typical Turn-off Delay Time: 120 ns
• Part # Aliases: PSMN009-100B,118

NXP Semiconductors
PSMN009-100B_2
Product data sheet
Fig 13. Source current as a function of source-drain voltage; typical values
(A)
I
S
100
80
60
40
20
0
0
T
Rev. 02 — 6 July 2009
j
= 175 °C
0.5
N-channel TrenchMOS SiliconMAX standard level FET
25 °C
1.0
V
SD
(V)
03ai06
1.5
PSMN009-100B
© NXP B.V. 2009. All rights reserved.
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