AT25DF081-SSHN-B Atmel, AT25DF081-SSHN-B Datasheet - Page 28

• Manufacturer Part Number: AT25DF081-SSHN-B
• Description: IC FLASH 8MBIT 66MHZ 8SOIC
• Manufacturer: Atmel

Specifications of AT25DF081-SSHN-B

• Format - Memory: FLASH
• Memory Type: DataFLASH
• Memory Size: 8M (4096 pages x 256 bytes)
• Speed: 66MHz
• Interface: SPI, 3-Wire Serial
• Voltage - Supply: 1.65 V ~ 1.95 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 8-SOIC (3.9mm Width)
• Cell Type: NOR
• Density: 8Mb
• Access Time (max): 7ns
• Interface Type: Serial (SPI)
• Boot Type: Not Required
• Address Bus: 1b
• Operating Supply Voltage (typ): 1.8V
• Operating Temp Range: -40C to 85C
• Package Type: SOIC
• Sync/async: Synchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 1.65V
• Operating Supply Voltage (max): 1.95V
• Supply Current: 12mA
• Mounting: Surface Mount
• Pin Count: 8
• Architecture: Sectored
• Supply Voltage (max): 1.95 V
• Supply Voltage (min): 1.65 V
• Maximum Operating Current: 12 mA
• Mounting Style: SMD/SMT
• Organization: 64 KB x 16
• Memory Configuration: 4096 Pages X 256 Bytes
• Clock Frequency: 66MHz
• Supply Voltage Range: 1.65V To 1.95V
• Memory Case Style: SOIC
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

12. Electrical Specifications
12.1
12.2
12.3
28
Temperature Under Bias............................... -55° C to +125° C
Storage Temperature .................................... -65° C to +150° C
All Input Voltages
(including NC Pins)
with Respect to Ground .....................................-0.6V to +3.8V
All Output Voltages
with Respect to Ground .............................-0.6V to V
Operating Temperature (Case)
V
Symbol
I
I
I
I
I
I
I
V
V
V
V
SB
DPD
CC1
CC2
CC3
LI
LO
OL
OH
CC
IL
IH
Power Supply
Absolute Maximum Ratings*
DC and AC Operating Range
DC Characteristics
AT25DF081
Parameter
Standby Current
Deep Power-Down Current
Active Current, Read Operation
Active Current, Program Operation
Active Current, Erase Operation
Input Leakage Current
Output Leakage Current
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
Ind.
Condition
CS, WP, HOLD = V
all inputs at CMOS levels
CS, WP, HOLD = VCC,
all inputs at CMOS levels
f = 66 MHz, I
CS = V
f = 50 MHz; I
CS = V
f = 33 MHz, I
CS = V
f = 20 MHz, I
CS = V
CS = V
CS
V
V
I
I
OL
OH
IN
OUT
= V
CC
= 100 µA, V
= -100 µA, V
= CMOS levels
= CMOS levels
+ 0.5V
CC
IL
IL
IL
IL
CC
, V
, V
, V
, V
, V
, V
CC
CC
CC
CC
CC
CC
OUT
OUT
OUT
OUT
= Max
= Max
= Max
= Max
= Max
= Max
CC
CC
= 0 mA,
= 0 mA,
= 0 mA,
= 0 mA,
= Min
CC
= Min
*NOTICE:
,
0.8 x V
V
Stresses beyond those listed under “Absolute
Maximum Ratings” may cause permanent dam-
age to the device. This is a stress rating only and
functional operation of the device at these or any
other conditions beyond those indicated in the
operational sections of this specification is not
implied. Exposure to absolute maximum rating
conditions for extended periods may affect device
reliability.
CC
Min
-40° C to +85° C
- 0.2
1.65V to 1.95V
AT25DF081
CC
Typ
25
12
14
8
9
8
7
6
0.2 x V
Max
0.2
35
14
12
11
10
15
17
9
1
1
CC
3674E–DFLASH–8/08
Units
mA
mA
mA
µA
µA
µA
µA
V
V
V
V