MT48H8M16LFB4-8 IT TR Micron Technology Inc, MT48H8M16LFB4-8 IT TR Datasheet - Page 24

• Manufacturer Part Number: MT48H8M16LFB4-8 IT TR
• Description: IC SDRAM 128MBIT 125MHZ 54VFBGA
• Manufacturer: Micron Technology Inc

Specifications of MT48H8M16LFB4-8 IT TR

• Format - Memory: RAM
• Memory Type: Mobile SDRAM
• Memory Size: 128M (8Mx16)
• Speed: 125MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 54-VFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 557-1051-2

Figure 14: READ-To-PRECHARGE
Figure 15: Terminating a READ Burst
PDF: 09005aef80c97087/Source: 09005aef80c97015
MT48H8M16_2.fm - Rev. E 3/05 EN
Note:
Note:
COMMAND
COMMAND
COMMAND
COMMAND
ADDRESS
ADDRESS
ADDRESS
ADDRESS
DQM is LOW.
DQM is LOW.
CLK
CLK
CLK
CLK
DQ
DQ
DQ
DQ
BANK a,
BANK a,
COL n
COL n
BANK,
T0
T0
T0
COL n
T0
BANK,
COL n
READ
READ
READ
READ
CL = 2
CL = 2
CL = 3
CL = 3
T1
T1
T1
T1
NOP
NOP
NOP
NOP
T2
T2
T2
T2
NOP
NOP
NOP
NOP
D
D
OUT
OUT
n
n
24
T3
T3
T3
T3
TRANSITIONING DATA
NOP
NOP
NOP
NOP
n + 1
D
n + 1
D
D
D
OUT
OUT
n
OUT
OUT
n
PRECHARGE
PRECHARGE
TERMINATE
TERMINATE
(a or all)
(a or all)
BANK
BANK
T4
T4
T4
BURST
T4
BURST
TRANSITIONING DATA
Micron Technology, Inc., reserves the right to change products or specifications without notice.
X = 1 cycle
X = 1 cycle
n + 2
n + 2
D
n + 1
D
D
n + 1
D
OUT
OUT
OUT
OUT
X = 2 cycles
X = 2 cycles
T5
T5
T5
T5
NOP
NOP
NOP
NOP
n + 3
n + 2
n + 3
D
D
D
D
n + 2
OUT
OUT
OUT
OUT
t RP
t RP
T6
T6
T6
T6
NOP
NOP
NOP
NOP
128Mb: x16 Mobile SDRAM
n + 3
D
n + 3
D
OUT
OUT
DON’T CARE
BANK a,
BANK a,
ACTIVE
ACTIVE
T7
T7
T7
DON’T CARE
ROW
ROW
NOP
©2003 Micron Technology, Inc. All rights reserved.
READs