MT48H8M16LFB4-8 IT TR Micron Technology Inc, MT48H8M16LFB4-8 IT TR Datasheet - Page 9

• Manufacturer Part Number: MT48H8M16LFB4-8 IT TR
• Description: IC SDRAM 128MBIT 125MHZ 54VFBGA
• Manufacturer: Micron Technology Inc

Specifications of MT48H8M16LFB4-8 IT TR

• Format - Memory: RAM
• Memory Type: Mobile SDRAM
• Memory Size: 128M (8Mx16)
• Speed: 125MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 54-VFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 557-1051-2

Burst Length
PDF: 09005aef80c97087/Source: 09005aef80c97015
MT48H8M16_2.fm - Rev. E 3/05 EN
Read and write accesses to the SDRAM are burst oriented, with the burst length being
programmable, as shown in Figure 4, "Mode Register Definition," on page 11. The burst
length determines the maximum number of column locations that can be accessed for a
given READ or WRITE command. Burst lengths of 1, 2, 4, or 8 locations are available for
both the sequential and the interleaved burst types, and a full-page burst is available for
the sequential type. The full-page burst is used in conjunction with the BURST TERMI-
NATE command to generate arbitrary burst lengths.
Reserved states should not be used, as unknown operation or incompatibility with
future versions may result.
When a READ or WRITE command is issued, a block of columns equal to the burst
length is effectively selected. All accesses for that burst take place within this block,
meaning that the burst will wrap within the block if a boundary is reached. The block is
uniquely selected by A0–A8 when the burst length is set to two; by A2–A8 when the burst
length is set to four; and by A3–A8 when the burst length is set to eight.
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Micron Technology, Inc., reserves the right to change products or specifications without notice.
128Mb: x16 Mobile SDRAM
Mode Register Definition
©2003 Micron Technology, Inc. All rights reserved.