MT48H8M16LFB4-8 IT TR Micron Technology Inc, MT48H8M16LFB4-8 IT TR Datasheet - Page 6

IC SDRAM 128MBIT 125MHZ 54VFBGA

MT48H8M16LFB4-8 IT TR

Manufacturer Part Number
MT48H8M16LFB4-8 IT TR
Description
IC SDRAM 128MBIT 125MHZ 54VFBGA
Manufacturer
Micron Technology Inc
Datasheet

Specifications of MT48H8M16LFB4-8 IT TR

Format - Memory
RAM
Memory Type
Mobile SDRAM
Memory Size
128M (8Mx16)
Speed
125MHz
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.9 V
Operating Temperature
-40°C ~ 85°C
Package / Case
54-VFBGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
557-1051-2
Figure 3: 8 Meg x 16 SDRAM Functional Block Diagram
BA0, BA1
PDF: 09005aef80c97087/Source: 09005aef80c97015
MT48H8M16_2.fm - Rev. E 3/05 EN
A0-A11,
CAS#
RAS#
WE#
CKE
CLK
CS#
14
REGISTER
ADDRESS
MODE REGISTER
CONTROL
LOGIC
12
SDRAMs offer substantial advances in DRAM operating performance, including the abil-
ity to synchronously burst data at a high data rate with automatic column-address gen-
eration, the ability to interleave between internal banks in order to hide precharge time
and the capability to randomly change column addresses on each clock cycle during a
burst access.
COUNTER
REFRESH
12
8
2
12
ADDRESS
2
ROW-
MUX
COUNTER/
COLUMN-
CONTROL
ADDRESS
LATCH
BANK
LOGIC
12
DECODER
ADDRESS
BANK0
LATCH
ROW-
&
9
4096
6
READ DATA LATCH
DQM MASK LOGIC
SENSE AMPLIFIERS
(4,096 x 512 x 16)
WRITE DRIVERS
I/O GATING
DECODER
MEMORY
COLUMN
BANK0
ARRAY
4096
(x16)
512
BANK1
Micron Technology, Inc., reserves the right to change products or specifications without notice.
BANK2
BANK3
BA1
0
0
1
1
128Mb: x16 Mobile SDRAM
16
16
2
BA0
0
1
0
1
REGISTER
REGISTER
OUTPUT
INPUT
DATA
DATA
General Description
©2003 Micron Technology, Inc. All rights reserved.
Bank
0
1
2
3
2
16
DQML,
DQMH
DQ0-
DQ15

Related parts for MT48H8M16LFB4-8 IT TR