VNS1NV04DP-E STMicroelectronics, VNS1NV04DP-E Datasheet - Page 12

• Manufacturer Part Number: VNS1NV04DP-E
• Description: MOSFET N-CH 40V 1.7A 8SOIC
• Manufacturer: STMicroelectronics
• Series: OMNIFET II™r
• Type: Low Sider

Specifications of VNS1NV04DP-E

• Input Type: Non-Inverting
• Number Of Outputs: 2
• On-state Resistance: 250 mOhm
• Current - Peak Output: 1.7A
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Voltage - Supply: -
• Current - Output / Channel: -
• Lead Free Status / Rohs Status: Compliant

Electrical specifications
2.4
12/24
Electrical characteristics curves
Figure 9.
Figure 11. Derating curve
Figure 13. Static drain-source on
Rds(on) (mohms)
500
450
400
350
300
250
200
150
100
50
0
Vsd (mV)
1000
950
900
850
800
750
700
3
Tj=150ºC
Tj=-40ºC
Tj=25ºC
0
3.5
2
Source-drain diode forward
characteristics
resistance vs input voltage
(part 2/2)
Vin=0V
4
4
4.5
6
Vin(V)
Id (A)
8
5
10
5.5
Doc ID 17344 Rev 2
12
6
Id=1.5A
Id=1A
Id=1.5A
Id=1A
Id=1.5A
Id=1A
14
6.5
Figure 10. Static drain-source on
Figure 12. Static drain-source on
Figure 14. Transconductance
Gfs (S)
5.5
4.5
3.5
2.5
1.5
0.5
6
5
4
3
2
0
1
Rds(on) (mohms)
500
450
400
350
300
250
200
150
100
50
Rds(on) (ohms)
4.5
3.5
2.5
1.5
0.5
0
0
4
3
2
0
1
3
0
0.25
3.5
Vds=13V
0.05
resistance
resistance vs input voltage
(part 1/2)
Vin=2.5V
0.5
4
0.75
0.1
4.5
Tj=-40ºC
Vin(V)
Id(A)
Id(A)
5
0.15
1
5.5
1.25
VNS1NV04DP-E
Id=0.5A
0.2
6
Tj=150ºC
Tj=-40ºC
Tj=25ºC
1.5
Tj=150ºC
Tj=-40ºC
Tj=25ºC
0.25
6.5
Tj=25ºC
1.75
Tj=150ºC
7
0.3
2