VNS1NV04DP-E STMicroelectronics, VNS1NV04DP-E Datasheet - Page 7

• Manufacturer Part Number: VNS1NV04DP-E
• Description: MOSFET N-CH 40V 1.7A 8SOIC
• Manufacturer: STMicroelectronics
• Series: OMNIFET II™r
• Type: Low Sider

Specifications of VNS1NV04DP-E

• Input Type: Non-Inverting
• Number Of Outputs: 2
• On-state Resistance: 250 mOhm
• Current - Peak Output: 1.7A
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Voltage - Supply: -
• Current - Output / Channel: -
• Lead Free Status / Rohs Status: Compliant

VNS1NV04DP-E
2.2
2.3
Thermal data
Table 3.
Electrical characteristics
Table 4.
1. -40 °C < T
Table 5.
1. -40 °C < T
Table 6.
1. T
R
R
Symbol
Symbol
Symbol
Symbol
V
R
thj-lead
thj-amb
V
V
V
g
C
CLAMP
I
DS(on)
I
CLTH
DSS
fs
INTH
INCL
ISS
OSS
j
= 25 °C, unless otherwise specified.
(1)
Thermal resistance junction-lead (per channel)
Thermal resistance junction-ambient
Drain-source clamp
voltage
Drain-source clamp
threshold voltage
Input threshold
voltage
Supply current from
input pin
Input-source clamp
voltage
Zero input voltage
drain current
(V
Static drain-source on
resistance
Forward
transconductance
Output capacitance
j
j
< 150 °C, unless otherwise specified.
< 150 °C, unless otherwise specified.
IN
Thermal data
Off
On
Dynamic
= 0V)
Parameter
Parameter
Parameter
(1)
(1)
(1)
Doc ID 17344 Rev 2
Parameter
V
V
V
V
I
I
V
V
V
V
IN
IN
V
V
IN
IN
DS
DS
DS
DS
IN
IN
DD
DS
= 1 mA
= -1 mA
= 0 V; I
= 0 V; I
= 5 V; I
= 5 V; I
= V
= 0 V; V
= 13 V; V
= 25 V; V
= 13 V; f = 1 MHz; V
= 13 V; I
IN
Test conditions
Test conditions
Test conditions
; I
D
D
D
D
D
IN
= 0.5 A
= 2 mA
= 0.5 A; T
= 0.5 A
= 1 mA
IN
D
IN
= 5 V
= 0.5 A
= 0 V; T
= 0 V
j
= 25 °C
j
= 25 °C
IN
= 0 V
Min.
Min.
Min.
-1.0
0.5
Electrical specifications
40
36
6
See
Max. value
Figure 31
Typ.
Typ.
Typ.
100
6.8
30
45
90
2
Max.
Max.
Max.
150
-0.3
250
500
2.5
55
30
75
8
°C/W
°C/W
Unit
Unit
Unit
Unit
mΩ
mΩ
µA
µA
µA
pF
V
V
V
V
V
S
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