VNS1NV04DP-E STMicroelectronics, VNS1NV04DP-E Datasheet - Page 6

• Manufacturer Part Number: VNS1NV04DP-E
• Description: MOSFET N-CH 40V 1.7A 8SOIC
• Manufacturer: STMicroelectronics
• Series: OMNIFET II™r
• Type: Low Sider

Specifications of VNS1NV04DP-E

• Input Type: Non-Inverting
• Number Of Outputs: 2
• On-state Resistance: 250 mOhm
• Current - Peak Output: 1.7A
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Voltage - Supply: -
• Current - Output / Channel: -
• Lead Free Status / Rohs Status: Compliant

Electrical specifications
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2.1
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Electrical specifications
Figure 3.
Absolute maximum ratings
Stressing the device above the rating listed in the “Absolute maximum ratings” table may
cause permanent damage to the device. These are stress ratings only and operation of the
device at these or any other conditions above those indicated in the operating sections of
this specification is not implied. Exposure to Absolute maximum rating conditions for
extended periods may affect device reliability. Refer also to the STMicroelectronics SURE
program and other relevant quality document.
Table 2.
Symbol
R
V
V
V
IN MINn
V
T
P
I
ESD1
ESD2
I
I
T
DSn
INn
Dn
Rn
T
INn
stg
tot
c
j
V
IN1
Drain-source voltage (V
Input voltage
Input current
Minimum input series impedance
Drain current
Reverse DC output current
Electrostatic discharge (R = 1.5 KΩ, C = 100 pF)
Electrostatic discharge on output pins only
(R = 330 Ω, C = 150 pF)
Total dissipation at T
Operating junction temperature
Case operating temperature
Storage temperature
Current and voltage conventions
Absolute maximum ratings
I
IN1
V
IN2
I
IN2
R
IN1
R
IN2
c
Doc ID 17344 Rev 2
= 25 °C
Parameter
INPUT 1
INPUT 2
INn
SOURCE 1
= 0 V)
SOURCE 2
DRAIN 1
DRAIN 2
Internally clamped
Internally clamped
Internally limited
Internally limited
Internally limited
-55 to 150
I
16500
D2
Value
+/-20
4000
330
-3
4
I
D1
V
VNS1NV04DP-E
DS1
V
DS1
Unit
mA
°C
°C
°C
W
Ω
V
V
A
A
V
V