VNS1NV04DP-E STMicroelectronics, VNS1NV04DP-E Datasheet - Page 17

• Manufacturer Part Number: VNS1NV04DP-E
• Description: MOSFET N-CH 40V 1.7A 8SOIC
• Manufacturer: STMicroelectronics
• Series: OMNIFET II™r
• Type: Low Sider

Specifications of VNS1NV04DP-E

• Input Type: Non-Inverting
• Number Of Outputs: 2
• On-state Resistance: 250 mOhm
• Current - Peak Output: 1.7A
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Voltage - Supply: -
• Current - Output / Channel: -
• Lead Free Status / Rohs Status: Compliant

VNS1NV04DP-E
4
4.1
Note:
Package and PCB thermal data
SO-8 thermal data
Figure 30. SO-8 PC board
Layout condition of R
thickness = 2 mm, Cu thickness = 35 µm, Copper areas: from minimum pad lay-out to
0.8 cm
Figure 31. R
RTH
115
110
105
100
95
90
85
80
2
).
J
_amb (°C/W)
0
thj-amb
0,1
th
vs PCB copper area in open box free air condition
PCB Cu heat sink area ( cm^ 2) - ( refer t o PCB layout )
and Z
th
Doc ID 17344 Rev 2
0,2
measurements (PCB FR4 area = 58 mm x 58 mm, PCB
0,3
0,4
Package and PCB thermal data
0,5
0,6
0,7
17/24