VNS1NV04DP-E STMicroelectronics, VNS1NV04DP-E Datasheet - Page 8

• Manufacturer Part Number: VNS1NV04DP-E
• Description: MOSFET N-CH 40V 1.7A 8SOIC
• Manufacturer: STMicroelectronics
• Series: OMNIFET II™r
• Type: Low Sider

Specifications of VNS1NV04DP-E

• Input Type: Non-Inverting
• Number Of Outputs: 2
• On-state Resistance: 250 mOhm
• Current - Peak Output: 1.7A
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Voltage - Supply: -
• Current - Output / Channel: -
• Lead Free Status / Rohs Status: Compliant

Electrical specifications
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Table 7.
1. T
Table 8.
1. T
2. Pulsed: pulse duration = 300µs, duty cycle 1.5%.
Table 9.
1. -40 °C < T
Symbol
Symbol
Symbol
(dI/dt)
V
t
t
t
t
I
t
T
T
E
I
d(on)
d(off)
d(on)
d(off)
RRM
dlim
SD
Q
I
lim
Q
t
jsh
gf
j
j
jrs
t
t
t
t
as
rr
r
r
f
f
= 25 °C, unless otherwise specified.
rr
= 25 °C, unless otherwise specified.
i
(2)
on
Drain current limit
Step response current
limit
Overtemperature
shutdown
Overtemperature reset
Fault sink current
Single pulse
avalanche energy
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on current slope
Total input charge
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
j
< 150 °C, unless otherwise specified.
Switching
Source Drain diode
Protections
Parameter
Parameter
Parameter
(1)
(1)
Doc ID 17344 Rev 2
V
V
(see
V
V
(see
V
V
V
I
V
V
V
Starting T
V
L = 50 mH
(see
gen
DD
gen
DD
gen
DD
gen
DD
IN
IN
IN
IN
(1)
I
I
V
(see
= 5 V; V
= 5 V; V
= 5 V; V
= 5 V R
= 2.13 mA (see
SD
SD
= 15 V; I
= 15 V; I
= 15 V; I
= 12 V; I
Figure
Figure
DD
Figure 6
= 5 V; R
= 5 V; R
= 5 V; R
= 0.5 A; V
= 0.5 A; dI/dt = 6 A/µs
= 30 V; L = 200 µH
Figure
Test conditions
j
Test conditions
= 25 °C; V
gen
DS
DS
DS
4)
4)
Test conditions
D
D
D
D
gen
gen
gen
and
= 0.5 A;
= 0.5 A
= 1.5 A
= 0.5 A; V
= 13 V
= 13 V
= 13 V; T
= R
5)
= R
= 2.2 KΩ
= R
IN
IN MIN
Figure
= 0 V
Figure
IN MIN
IN MIN
DD
j
= 24 V
IN
= 330 Ω;
= T
8)
= 330 Ω
= 330 Ω
7)
= 5 V
jsh
Min.
Min.
Min.
150
135
1.7
10
55
-
-
-
-
Typ.
0.25
170
350
200
1.3
1.8
1.2
70
5
5
Typ. Max. Unit
0.75
Typ. Max. Unit
205
100
175
VNS1NV04DP-E
0.8
15
2
Max.
1000
200
500
600
5.5
1
4
4
200
3.5
20
-
-
-
-
A/µs
Unit
nC
ns
µs
µs
ns
ns
ns
µs
µs
mA
nC
mJ
°C
°C
ns
µs
V
A
A