VNS1NV04DP-E STMicroelectronics, VNS1NV04DP-E Datasheet - Page 9

• Manufacturer Part Number: VNS1NV04DP-E
• Description: MOSFET N-CH 40V 1.7A 8SOIC
• Manufacturer: STMicroelectronics
• Series: OMNIFET II™r
• Type: Low Sider

Specifications of VNS1NV04DP-E

• Input Type: Non-Inverting
• Number Of Outputs: 2
• On-state Resistance: 250 mOhm
• Current - Peak Output: 1.7A
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Voltage - Supply: -
• Current - Output / Channel: -
• Lead Free Status / Rohs Status: Compliant

VNS1NV04DP-E
Figure 4.
Figure 5.
V
I
Switching time test circuit for resistive load
Test circuit for diode recovery times
D
gen
330Ω
I
t
OMNIFET
d(on)
t
r
D
S
V
gen
Doc ID 17344 Rev 2
B
A
90%
R
10%
gen
FAST
DIODE
t
d(off)
I
V
t
OMNIFET
f
gen
R
B
A
gen
V
D
D
S
8.5 Ω
L=100uH
Electrical specifications
t
t
V
DD
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