VNS1NV04DP-E STMicroelectronics, VNS1NV04DP-E Datasheet - Page 18
VNS1NV04DP-E
Manufacturer Part Number
VNS1NV04DP-E
Description
MOSFET N-CH 40V 1.7A 8SOIC
Manufacturer
STMicroelectronics
Series
OMNIFET II™r
Type
Low Sider
Datasheet
1.VNS1NV04DPTR-E.pdf
(24 pages)
Specifications of VNS1NV04DP-E
Input Type
Non-Inverting
Number Of Outputs
2
On-state Resistance
250 mOhm
Current - Peak Output
1.7A
Operating Temperature
-40°C ~ 150°C
Mounting Type
Surface Mount
Package / Case
*
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Voltage - Supply
-
Current - Output / Channel
-
Lead Free Status / Rohs Status
Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
VNS1NV04DP-E
Manufacturer:
ST
Quantity:
3 310
Package and PCB thermal data
18/24
Figure 32. SO-8 thermal impedance junction ambient single pulse
Equation 1: pulse calculation formula
where δ = t
Figure 33. Thermal fitting model of a double channel HSD in SO-8
Z
1000
ZTH ( ° C/ W)
THδ
100
0,1
10
1
0,0001
=
R
P
TH
/T
⋅
0,001
δ
+
Z
THtp
(
0,01
1 δ
–
Doc ID 17344 Rev 2
)
0,1
Time ( s)
1
10
100
VNS1NV04DP-E
1000
0.15 cm
0.07cm
0.3 cm
0.6 cm
2
2
2
2