VNS1NV04DP-E STMicroelectronics, VNS1NV04DP-E Datasheet - Page 21

• Manufacturer Part Number: VNS1NV04DP-E
• Description: MOSFET N-CH 40V 1.7A 8SOIC
• Manufacturer: STMicroelectronics
• Series: OMNIFET II™r
• Type: Low Sider

Specifications of VNS1NV04DP-E

• Input Type: Non-Inverting
• Number Of Outputs: 2
• On-state Resistance: 250 mOhm
• Current - Peak Output: 1.7A
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Voltage - Supply: -
• Current - Output / Channel: -
• Lead Free Status / Rohs Status: Compliant

VNS1NV04DP-E
Table 11.
1. Dimensions D does not include mold flash, protrusions or gate burrs. Mold flash, potrusions or gate burrs
2. Dimension “E1” does not include interlead flash or protrusions. Interlead flash or protrusions shall not
shall not exceed 0.15 mm in total (both side).
exceed 0.25 mm per side.
Symbol
E1
D
ccc
A1
A2
L1
A
E
b
e
h
L
c
k
(1)
(2)
SO-8 mechanical data
Doc ID 17344 Rev 2
Min.
0.10
1.25
0.28
0.17
4.80
5.80
3.80
0.25
0.40
0°
Millimeters
Typ.
4.90
6.00
3.90
1.27
1.04
Package and packing information
Max.
1.75
0.25
0.48
0.23
5.00
6.20
4.00
0.50
1.27
0.10
8°
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