MT46H16M32LFCM-6:B Micron Technology Inc, MT46H16M32LFCM-6:B Datasheet - Page 28

• Manufacturer Part Number: MT46H16M32LFCM-6:B
• Manufacturer: Micron Technology Inc
• Type: DDR SDRAMr

Specifications of MT46H16M32LFCM-6:B

• Organization: 16Mx32
• Density: 512Mb
• Address Bus: 15b
• Access Time (max): 6.5/5ns
• Maximum Clock Rate: 166MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: VFBGA
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 1.95V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 115mA
• Pin Count: 90
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Compliant

Table 11: Electrical Characteristics and Recommended AC Operating Conditions (Continued)
Notes 1–9 apply to all parameters in this table; V
PDF: 09005aef82d5d305
512mb_ddr_mobile_sdram_t47m.pdf – Rev. I 12/09 EN
Parameter
DQS read postamble
Active bank a to active bank b
command
Read of SRR to next valid
command
SRR to read
DQS write preamble
DQS write preamble setup time
DQS write postamble
Write recovery time
Internal WRITE-to-READ
command delay
Exit power-down mode to first
valid command
Exit self refresh to first valid
command
Notes:
1. All voltages referenced to V
2. All parameters assume proper device initialization.
3. Tests for AC timing and electrical AC and DC characteristics may be conducted at nomi-
4. The circuit shown below represents the timing reference load used in defining the rele-
5. The CK/CK# input reference voltage level (for timing referenced to CK/CK#) is the point
6. A CK and CK# input slew rate ≥1 V/ns (2 V/ns if measured differentially) is assumed for
7. All AC timings assume an input slew rate of 1 V/ns.
nal supply voltage levels, but the related specifications and device operation are guaran-
teed for the full voltage ranges specified.
vant timing parameters of the device. It is not intended to be either a precise representa-
tion of the typical system environment or a depiction of the actual load presented by a
production tester. System designers will use IBIS or other simulation tools to correlate
the timing reference load to system environment. Specifications are correlated to produc-
tion test conditions (generally a coaxial transmission line terminated at the tester elec-
tronics). For the half-strength driver with a nominal 10pF load, parameters
are expected to be in the same range. However, these parameters are not subject to
production test but are estimated by design/characterization. Use of IBIS or other simula-
tion tools for system design validation is suggested.
at which CK and CK# cross; the input reference voltage level for signals other than CK/
CK# is V
all parameters.
Symbol
t
t
WPRES
t
t
I/O
WPRE
t
t
WPST
t
t
t
RPST
t
WTR
RRD
t
XSR
SRC
SRR
WR
XP
Full drive strength
DDQ
CL + 1
50
Min
0.25
/2.
120
0.4
0.4
10
15
2
0
2
2
Electrical Specifications – AC Operating Conditions
DD
/V
-5
DDQ
Max
0.6
0.6
–
–
–
–
–
–
–
–
–
20pF
= 1.70–1.95V
28
CL + 1
Min
10.8
0.25
120
0.4
0.4
SS
15
2
0
2
2
.
I/O
512Mb: x16, x32 Mobile LPDDR SDRAM
-54
Half drive strength
Max
0.6
0.6
Micron Technology, Inc. reserves the right to change products or specifications without notice.
–
–
–
–
–
–
–
–
–
50
CL + 1
Min
0.25
120
0.4
0.4
12
15
2
0
2
1
-6
Max
10pF
0.6
0.6
–
–
–
–
–
–
–
–
–
CL + 1
Min
0.25
120
0.4
0.4
15
15
© 2004 Micron Technology, Inc. All rights reserved.
2
0
1
1
-75
Max
0.6
0.6
–
–
–
–
–
–
–
–
–
Unit Notes
t
t
t
t
t
t
t
t
AC and
CK
ns
CK
CK
CK
ns
CK
ns
CK
CK
ns
23, 24
25
26
27
t
QH