MT46H16M32LFCM-6:B Micron Technology Inc, MT46H16M32LFCM-6:B Datasheet - Page 64

MT46H16M32LFCM-6:B

Manufacturer Part Number
MT46H16M32LFCM-6:B
Description
Manufacturer
Micron Technology Inc
Type
DDR SDRAMr
Datasheet

Specifications of MT46H16M32LFCM-6:B

Organization
16Mx32
Density
512Mb
Address Bus
15b
Access Time (max)
6.5/5ns
Maximum Clock Rate
166MHz
Operating Supply Voltage (typ)
1.8V
Package Type
VFBGA
Operating Temp Range
0C to 70C
Operating Supply Voltage (max)
1.95V
Operating Supply Voltage (min)
1.7V
Supply Current
115mA
Pin Count
90
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MT46H16M32LFCM-6:B
Manufacturer:
MICRON
Quantity:
4 000
Company:
Part Number:
MT46H16M32LFCM-6:B
Quantity:
132
Part Number:
MT46H16M32LFCM-6:B TR
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Figure 26: Random Read Accesses
PDF: 09005aef82d5d305
512mb_ddr_mobile_sdram_t47m.pdf – Rev. I 12/09 EN
Command
Command
Address
Address
DQS
DQS
CK#
CK#
DQ
DQ
CK
CK
Notes:
READ
READ
Bank,
Bank,
Col n
Col n
T0
T0
1. D
2. BL = 2, 4, 8, or 16 (if 4, 8, or 16, the following burst interrupts the previous).
3. READs are to an active row in any bank.
4. Shown with nominal
OUT
CL = 2
n (or x, b, g) = data-out from column n (or column x, column b, column g).
READ
Bank,
READ
Bank,
Col x
Col x
T1
T1
CL = 3
T1n
T1n
D
t
OUT
AC,
READ
Bank,
READ
Bank,
Col b
Col b
T2
T2
1
64
t
DQSCK, and
D
T2n
T2n
OUT
512Mb: x16, x32 Mobile LPDDR SDRAM
D
D
OUT
Micron Technology, Inc. reserves the right to change products or specifications without notice.
READ
READ
Bank,
Bank,
Col g
Col g
T3
T3
OUT
t
DQSQ.
D
Don’t Care
T3n
T3n
D
OUT
OUT
D
D
T4
OUT
T4
NOP
NOP
OUT
D
T4n
T4n
D
OUT
OUT
© 2004 Micron Technology, Inc. All rights reserved.
Transitioning Data
READ Operation
D
T5
T5
NOP
NOP
OUT
D
OUT
T5n
T5n
D
D
OUT
OUT

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