MT46H16M32LFCM-6:B Micron Technology Inc, MT46H16M32LFCM-6:B Datasheet - Page 62

MT46H16M32LFCM-6:B

Manufacturer Part Number
MT46H16M32LFCM-6:B
Description
Manufacturer
Micron Technology Inc
Type
DDR SDRAMr
Datasheet

Specifications of MT46H16M32LFCM-6:B

Organization
16Mx32
Density
512Mb
Address Bus
15b
Access Time (max)
6.5/5ns
Maximum Clock Rate
166MHz
Operating Supply Voltage (typ)
1.8V
Package Type
VFBGA
Operating Temp Range
0C to 70C
Operating Supply Voltage (max)
1.95V
Operating Supply Voltage (min)
1.7V
Supply Current
115mA
Pin Count
90
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Compliant

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Quantity
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MT46H16M32LFCM-6:B
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MT46H16M32LFCM-6:B
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Figure 24: Consecutive READ Bursts
PDF: 09005aef82d5d305
512mb_ddr_mobile_sdram_t47m.pdf – Rev. I 12/09 EN
Command
Command
Address
Address
DQS
DQS
CK#
CK#
DQ
DQ
CK
CK
Notes:
READ
Bank,
READ
Bank,
Col n
Col n
T0
T0
1. D
2. BL = 4, 8, or 16 (if 4, the bursts are concatenated; if 8 or 16, the second burst interrupts
3. Shown with nominal
4. Example applies only when READ commands are issued to same device.
the first).
OUT
n (or b) = data-out from column n (or column b).
CL = 2
NOP
NOP
T1
T1
CL = 3
T1n
D
OUT
t
READ
Bank,
READ
Bank,
Col b
Col b
AC,
T2
T2
1
62
t
DQSCK, and
D
T2n
T2n
OUT
512Mb: x16, x32 Mobile LPDDR SDRAM
D
D
OUT
Micron Technology, Inc. reserves the right to change products or specifications without notice.
NOP
NOP
T3
OUT
T3
t
DQSQ.
D
Don’t Care
D
T3n
T3n
OUT
OUT
D
D
T4
NOP
T4
NOP
OUT
OUT
D
T4n
T4n
D
OUT
OUT
Transitioning Data
© 2004 Micron Technology, Inc. All rights reserved.
READ Operation
D
T5
NOP
T5
NOP
D
OUT
OUT
T5n
T5n
D
D
OUT
OUT

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