MT46H16M32LFCM-6:B Micron Technology Inc, MT46H16M32LFCM-6:B Datasheet - Page 5

• Manufacturer Part Number: MT46H16M32LFCM-6:B
• Manufacturer: Micron Technology Inc
• Type: DDR SDRAMr

Specifications of MT46H16M32LFCM-6:B

• Organization: 16Mx32
• Density: 512Mb
• Address Bus: 15b
• Access Time (max): 6.5/5ns
• Maximum Clock Rate: 166MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: VFBGA
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 1.95V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 115mA
• Pin Count: 90
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Compliant

List of Tables
Table 1: Key Timing Parameters (CL = 3) .......................................................................................................... 1
Table 2: Configuration Addressing 512 ............................................................................................................. 2
Table 3: VFBGA Ball Descriptions .................................................................................................................. 13
Table 4: Absolute Maximum Ratings .............................................................................................................. 18
Table 5: AC/DC Electrical Characteristics and Operating Conditions ............................................................... 18
Table 6: 1.2V I/O AC/DC Electrical Characteristics and Operating Conditions ................................................. 19
Table 7: Capacitance (x16, x32) ...................................................................................................................... 20
Table 8: I
Table 9: I
Table 10: I
Table 11: Electrical Characteristics and Recommended AC Operating Conditions ............................................ 26
Table 12: Target Output Drive Characteristics (Full Strength) .......................................................................... 30
Table 13: Target Output Drive Characteristics (Three-Quarter Strength) .......................................................... 31
Table 14: 1.2V I/O Target Output Drive Characteristics (Three-Quarter Strength) ............................................ 32
Table 15: Target Output Drive Characteristics (One-Half Strength) ................................................................. 33
Table 16: Truth Table – Commands ............................................................................................................... 35
Table 17: DM Operation Truth Table ............................................................................................................. 36
Table 18: Truth Table – Current State Bank n – Command to Bank n ............................................................... 42
Table 19: Truth Table – Current State Bank n – Command to Bank m .............................................................. 43
Table 20: Truth Table – CKE .......................................................................................................................... 46
Table 21: Burst Definition Table .................................................................................................................... 52
PDF: 09005aef82d5d305
512mb_ddr_mobile_sdram_t47m.pdf – Rev. I 12/09 EN
DD
DD
DD6
Specifications and Conditions (x16) ............................................................................................ 22
Specifications and Conditions (x32) ............................................................................................ 23
Specifications and Conditions .................................................................................................. 24
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512Mb: x16, x32 Mobile LPDDR SDRAM
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2004 Micron Technology, Inc. All rights reserved.