MT46H16M32LFCM-6:B Micron Technology Inc, MT46H16M32LFCM-6:B Datasheet - Page 47

• Manufacturer Part Number: MT46H16M32LFCM-6:B
• Manufacturer: Micron Technology Inc
• Type: DDR SDRAMr

Specifications of MT46H16M32LFCM-6:B

• Organization: 16Mx32
• Density: 512Mb
• Address Bus: 15b
• Access Time (max): 6.5/5ns
• Maximum Clock Rate: 166MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: VFBGA
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 1.95V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 115mA
• Pin Count: 90
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Compliant

State Diagram
Figure 15: Simplified State Diagram
PDF: 09005aef82d5d305
512mb_ddr_mobile_sdram_t47m.pdf – Rev. I 12/09 EN
ACT = ACTIVE
AREF = AUTO REFRESH
BST = BURST TERMINATE
CKEH = Exit power-down
CKEL = Enter power-down
DPD = Enter deep power-down
applied
Power
WRITE
LMR
PRE
PREALL
Power
PRE
EMR
LMR
WRITE A
on
WRITING
WRITING
power-
Active
down
DPDX = Exit deep power-down
EMR = LOAD EXTENDED MODE REGISTER
LMR = LOAD MODE REGISTER
PRE = PRECHARGE
PREALL = PRECHARGE all banks
READ = READ w/o auto precharge
DPDX
WRITE
LMR
CKEL
power-
down
Deep
WRITE A
WRITE A
CKEH
PRE
DPD
Precharging
precharged
all banks
active
47
Row
Idle:
ACT
PRE
SREF
READ A
WRITE
READ
512Mb: x16, x32 Mobile LPDDR SDRAM
CKEH
refresh
READ A
PRE
Self
SREFX
Micron Technology, Inc. reserves the right to change products or specifications without notice.
SRR
CKEL
READ
Precharge
AREF
power-
down
terminate
READING
READING
BST
Burst
SRR
READ A
READ A = READ w/ auto precharge
SREF = Enter self refresh
SREFX = Exit self refresh
SRR = STATUS REGISTER READ
WRITE = WRITE w/o auto precharge
WRITE A = WRITE w/ auto precharge
refresh
Automatic sequence
Command sequence
Auto
READ
READ
© 2004 Micron Technology, Inc. All rights reserved.
READ
State Diagram