MT48LC16M16A2P-7E:D Micron Technology Inc, MT48LC16M16A2P-7E:D Datasheet - Page 10

• Manufacturer Part Number: MT48LC16M16A2P-7E:D
• Description: SDRAM 256MB, SMD, 48LC16, TSOP54
• Manufacturer: Micron Technology Inc
• Type: SDRAMr
• Series: -r

Specifications of MT48LC16M16A2P-7E:D

• Organization: 16Mx16
• Density: 256Mb
• Address Bus: 15b
• Access Time (max): 5.4ns
• Maximum Clock Rate: 143MHz
• Operating Supply Voltage (typ): 3.3V
• Package Type: TSOP-II
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 3.6V
• Operating Supply Voltage (min): 3V
• Supply Current: 135mA
• Pin Count: 54
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Access Time: RoHS Compliant
• Memory Case Style: TSOP
• No. Of Pins: 54
• Operating Temperature Range: 0°C To +70°C
• Operating Temperature Max: 70°C
• Operating Temperature Min: 0°C
• Package / Case: TSOP
• Memory Type: DRAM - Synchronous
• Memory Configuration: 4 BLK (4M X 16)
• Interface Type: LVTTL
• Rohs Compliant: Yes
• Format - Memory: RAM
• Memory Size: 256M (16Mx16)
• Speed: 133MHz
• Interface: Parallel
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Lead Free Status / RoHS Status: Compliant
• Lead Free Status / RoHS Status: Compliant

Table 4:
PDF: 09005aef80725c0b/Source: 09005aef806fc13c
64MSDRAM_2.fm - Rev. M 10/07 EN
2, 4, 5, 7, 8,
10, 11, 13,
42, 44, 45,
47, 48, 50,
2, 5, 8, 11,
44, 47, 50,
Numbers
29–34, 22,
TSOP Pin
16, 17, 18
5, 11, 44,
23–26,
15, 39
51, 53
20, 21
38
37
19
39
35
53
50
40
H3, H2, H1,
D2, D1, C2,
A8, B9, B8,
C9, C8, D9,
H7, H8, J8,
G3, H9, G2
D8, E9, E1,
C1, B2, B1,
Pin/Ball Descriptions
Numbers
F9, F7, F8
J7, J3, J2,
VFBGA
G7, G8
E8, F1
Ball
G9
A2
E2
F2
F3
–
–
–
WE#, CAS#,
DQ0–DQ15
DQ0–DQ7
DQ0–DQ3
BA0, BA1
Symbol
A0–A11
DQML,
DQMH
x4, x8:
DQM
RAS#
x16:
CLK
CKE
CS#
NC
x16: I/O
x8: I/O
x4: I/O
Input
Input
Input
Input
Input
Input
Input
Type
–
Clock: CLK is driven by the system clock. All SDRAM input signals are
sampled on the positive edge of CLK. CLK also increments the internal
burst counter and controls the output registers.
Clock enable: CKE activates (HIGH) and deactivates (LOW) the CLK
signal. Deactivating the clock provides PRECHARGE power-down and
SELF REFRESH operation (all banks idle), ACTIVE power-down (row
active in any bank), or CLOCK SUSPEND operation (burst/access in
progress). CKE is synchronous except after the device enters power-
down and self refresh modes, where CKE becomes asynchronous until
after exiting the same mode. The input buffers, including CLK, are
disabled during power-down and self refresh modes, providing low
standby power. CKE may be tied HIGH.
Chip select: CS# enables (registered LOW) and disables (registered
HIGH) the command decoder. All commands are masked when CS# is
registered HIGH, but READ/WRITE bursts already in progress will
continue and DQM will retain its DQ mask capability while CS#
remains HIGH. CS# provides for external bank selection on systems
with multiple banks. CS# is considered part of the command code.
Command inputs: WE#, CAS#, and RAS# (along with CS#) define the
command being entered.
Input/output mask: DQM is an input mask signal for write accesses and
an output enable signal for read accesses. Input data is masked when
DQM is sampled HIGH during a WRITE cycle. The output buffers are
placed in a High-Z state (two-clock latency) when DQM is sampled
HIGH during a READ cycle. On the x4 and x8, DQML (Pin 15) is a NC
and DQMH is DQM. On the x16, DQML corresponds to DQ0–DQ7 and
DQMH corresponds to DQ8–DQ15. DQML and DQMH are considered
same state when referenced as DQM.
Bank address inputs: BA0 and BA1 define to which bank the ACTIVE,
READ, WRITE or PRECHARGE command is being applied.
Address inputs: A0–A11 are sampled during the ACTIVE command
(row-address A0–A11) and READ/WRITE command (column-address
A0–A9 [x4]; A0–A8 [x8]; A0–A7 [x16]; with A10 defining auto
precharge) to select one location out of the memory array in the
respective bank. A10 is sampled during a precharge command to
determine whether all banks are to be precharged (A10[HIGH]) or
bank selected by BA0, BA1 (A1[LOW]). The address inputs also provide
the op-code during a LOAD MODE REGISTER command.
Data input/output: Data bus for x16 (4, 7, 10, 13, 42, 45, 48, and 51 are
NCs for x8; and 2, 4, 7, 8, 10, 13, 42, 45, 47, 48, 51, and 53 are NCs for
x4).
Data input/output: Data bus for x8 (2, 8, 47, 53 are NCs for x4).
Data input/output: Data bus for x4.
No connect: These pins should be left unconnected.
10
Pin/Ball Assignments and Descriptions
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Description
64Mb: x4, x8, x16 SDRAM
©2000 Micron Technology, Inc. All rights reserved.