MT48LC16M16A2P-7E:D Micron Technology Inc, MT48LC16M16A2P-7E:D Datasheet - Page 57

SDRAM 256MB, SMD, 48LC16, TSOP54

MT48LC16M16A2P-7E:D

Manufacturer Part Number
MT48LC16M16A2P-7E:D
Description
SDRAM 256MB, SMD, 48LC16, TSOP54
Manufacturer
Micron Technology Inc
Type
SDRAMr
Series
-r

Specifications of MT48LC16M16A2P-7E:D

Organization
16Mx16
Density
256Mb
Address Bus
15b
Access Time (max)
5.4ns
Maximum Clock Rate
143MHz
Operating Supply Voltage (typ)
3.3V
Package Type
TSOP-II
Operating Temp Range
0C to 70C
Operating Supply Voltage (max)
3.6V
Operating Supply Voltage (min)
3V
Supply Current
135mA
Pin Count
54
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Access Time
RoHS Compliant
Memory Case Style
TSOP
No. Of Pins
54
Operating Temperature Range
0°C To +70°C
Operating Temperature Max
70°C
Operating Temperature Min
0°C
Package / Case
TSOP
Memory Type
DRAM - Synchronous
Memory Configuration
4 BLK (4M X 16)
Interface Type
LVTTL
Rohs Compliant
Yes
Format - Memory
RAM
Memory Size
256M (16Mx16)
Speed
133MHz
Interface
Parallel
Voltage - Supply
3 V ~ 3.6 V
Operating Temperature
0°C ~ 70°C
Lead Free Status / RoHS Status
Compliant
Lead Free Status / RoHS Status
Compliant

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Part Number
Manufacturer
Quantity
Price
Part Number:
MT48LC16M16A2P-7E:D
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MT48LC16M16A2P-7E:D
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Part Number:
MT48LC16M16A2P-7E:D TR
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Part Number:
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6 700
Figure 42:
PDF: 09005aef80725c0b/Source: 09005aef806fc13c
64MSDRAM_2.fm - Rev. M 10/07 EN
DQML, DQMH
A0–A9, A11
COMMAND
BA0, BA1
DQM /
CLK
CKE
A10
DQ
t CMS
t CKS
t AS
t AS
t AS
Single READ – Without Auto Precharge
ACTIVE
ROW
ROW
T0
BANK
t CMH
t CKH
t AH
t AH
t AH
Notes:
t RCD
t RAS
t RC
t CK
T1
NOP
1. For this example, BL = 1, CL = 2, and the READ burst is followed by a “manual”
2. x16: A8, A9 and A11 = “Don’t Care”
3. PRECHARGE command not allowed or
PRECHARGE.
x8: A9 and A11 = “Don’t Care”
x4: A11 = “Don’t Care”
DISABLE AUTO PRECHARGE
t CMS
t CL
COLUMN m
BANK
T2
READ
t CMH
t CH
CAS Latency
2
T3
NOP
t LZ
t AC
57
T4
NOP
D
OUT
t OH
3
t HZ
m
t
Micron Technology, Inc., reserves the right to change products or specifications without notice.
SINGLE BANKS
RAS would be violated.
PRECHARGE
ALL BANKS
BANK(S)
T5
t RP
T6
NOP
64Mb: x4, x8, x16 SDRAM
©2000 Micron Technology, Inc. All rights reserved.
ACTIVE
BANK
ROW
T7
ROW
Timing Diagrams
T8
NOP
DON’T CARE
UNDEFINED

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