MT48LC16M16A2P-7E:D Micron Technology Inc, MT48LC16M16A2P-7E:D Datasheet - Page 43

• Manufacturer Part Number: MT48LC16M16A2P-7E:D
• Description: SDRAM 256MB, SMD, 48LC16, TSOP54
• Manufacturer: Micron Technology Inc
• Type: SDRAMr
• Series: -r

Specifications of MT48LC16M16A2P-7E:D

• Organization: 16Mx16
• Density: 256Mb
• Address Bus: 15b
• Access Time (max): 5.4ns
• Maximum Clock Rate: 143MHz
• Operating Supply Voltage (typ): 3.3V
• Package Type: TSOP-II
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 3.6V
• Operating Supply Voltage (min): 3V
• Supply Current: 135mA
• Pin Count: 54
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Access Time: RoHS Compliant
• Memory Case Style: TSOP
• No. Of Pins: 54
• Operating Temperature Range: 0°C To +70°C
• Operating Temperature Max: 70°C
• Operating Temperature Min: 0°C
• Package / Case: TSOP
• Memory Type: DRAM - Synchronous
• Memory Configuration: 4 BLK (4M X 16)
• Interface Type: LVTTL
• Rohs Compliant: Yes
• Format - Memory: RAM
• Memory Size: 256M (16Mx16)
• Speed: 133MHz
• Interface: Parallel
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Lead Free Status / RoHS Status: Compliant
• Lead Free Status / RoHS Status: Compliant

Table 12:
Table 13:
PDF: 09005aef80725c0b/Source: 09005aef806fc13c
64MSDRAM_2.fm - Rev. M 10/07 EN
Parameter
Die Revision
Operating case temperature:
Commercial
Junction temperature:
Commercial
Industrial
Ambient temperature:
Commercial
Industrial
Peak reflow temperature
G
Industrial
Temperature Limits
Thermal Impedance Simulated Values
Package
Notes:
Notes:
54-ball
VFBGA
54-pin
TSOP
1. MAX operating case temperature, T
2. Device functionality is not guaranteed if the device exceeds maximum T
3. Both temperature specifications must be satisfied.
4. The case temperature should be measured by gluing a thermocouple to the top center of
5. Operating ambient temperature surrounding the package.
1. For designs expected to last beyond the die revision listed, contact Micron Applications
2. Thermal resistance data is sampled from multiple lots, and the values should be viewed as
3. These are estimates; actual results may vary.
Substrate
side of the device, as shown in Figure 33 and Figure 34 on page 44.
the component. This should be done with a 1mm bead of conductive epoxy, as defined by
the JEDEC EIA/JESD51 standards. Care should be taken to ensure the thermocouple bead is
touching the case.
Engineering to confirm thermal impedance values.
typical.
4-layer
2-layer
4-layer
θ JA (°C/W)
Airflow =
0m/s
70.5
80.6
64
43
θ JA (°C/W)
Airflow =
1m/s
61.2
67.7
57.1
Symbol
C
, is measured in the center of the package on the top
T
PEAK
T
Micron Technology, Inc., reserves the right to change products or specifications without notice.
T
T
A
C
J
θ JA (°C/W)
Airflow =
2m/s
Min
57.2
61.5
53.5
-40
-40
-40
0
0
0
–
64Mb: x4, x8, x16 SDRAM
Electrical Specifications
Max
260
80
90
85
95
70
85
θ JB (°C/W)
©2000 Micron Technology, Inc. All rights reserved.
54.6
46.1
45.7
Units
C
°C
°C
°C
°C
during operation.
θ JC (°C/W)
13.7
1, 2, 3, 4
4.9
Notes
3, 5
3