MT46H8M32LFB5-6:H Micron Technology Inc, MT46H8M32LFB5-6:H Datasheet - Page 12

• Manufacturer Part Number: MT46H8M32LFB5-6:H
• Description: IC SDRAM 256MB 166MHZ 90VFBGA
• Manufacturer: Micron Technology Inc
• Series: -r
• Type: DDR SDRAMr

Specifications of MT46H8M32LFB5-6:H

• Format - Memory: RAM
• Memory Type: Mobile DDR SDRAM
• Memory Size: 256M (8Mx32)
• Speed: 166MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 90-VFBGA
• Organization: 8Mx32
• Density: 256Mb
• Address Bus: 14b
• Access Time (max): 6.5/5ns
• Maximum Clock Rate: 166MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: VFBGA
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 1.95V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 120mA
• Pin Count: 90
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Figure 5: 90-Ball VFBGA – 8mm x 13mm (Top View)
PDF: 09005aef834bf85b
256mb_mobile_ddr_sdram_t36n.pdf - Rev. I 09/10 EN
Note:
A
B
C
D
E
F
G
H
J
K
L
M
N
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R
1. D9 is a test pin that must be tied to V
V
V
V
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A6
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1
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SS
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DQ31
DQ29
DQ27
DQ25
DQ11
DQ13
DQ15
DQS3
DQS1
DM3
DM1
DQ9
A11
CK
A7
2
DQ30
DQ28
DQ26
DQ24
DQ10
DQ12
DQ14
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DQ8
V
CK#
A12
NC
A8
A5
3
SSQ
SSQ
12
4
256Mb: x16, x32 Mobile LPDDR SDRAM
5
Micron Technology, Inc. reserves the right to change products or specifications without notice.
SS
Ball Assignments and Descriptions
or V
6
SSQ
in normal operations.
A10/AP
DQ17
DQ19
DQ21
DQ23
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V
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DQ7
DQ5
DQ3
DQ1
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CS#
A2
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7
DQ16
DQ18
DQ20
DQ22
DQS2
DQS0
CAS#
DM2
DM0
DQ6
DQ4
DQ2
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A0
8
© 2008 Micron Technology, Inc. All rights reserved.
TEST
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