MT46H8M32LFB5-6:H Micron Technology Inc, MT46H8M32LFB5-6:H Datasheet - Page 86

• Manufacturer Part Number: MT46H8M32LFB5-6:H
• Description: IC SDRAM 256MB 166MHZ 90VFBGA
• Manufacturer: Micron Technology Inc
• Series: -r
• Type: DDR SDRAMr

Specifications of MT46H8M32LFB5-6:H

• Format - Memory: RAM
• Memory Type: Mobile DDR SDRAM
• Memory Size: 256M (8Mx32)
• Speed: 166MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 90-VFBGA
• Organization: 8Mx32
• Density: 256Mb
• Address Bus: 14b
• Access Time (max): 6.5/5ns
• Maximum Clock Rate: 166MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: VFBGA
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 1.95V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 120mA
• Pin Count: 90
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Figure 47: Bank Write – Without Auto Precharge
Command
PDF: 09005aef834bf85b
256mb_mobile_ddr_sdram_t36n.pdf - Rev. I 09/10 EN
BA0, BA1
Address
DQS
DQ
CK#
CKE
A10
DM
CK
6
t
t
IS
IS
NOP
T0
t
t
IH
1
IH
Notes:
t
t
IS
ACTIVE
Bank x
IS
Row
Row
T1
t
t
IH
IH
t
CK
1. NOP commands are shown for ease of illustration; other commands may be valid at
2. BL = 4 in the case shown.
3. PRE = PRECHARGE.
4. Disable auto precharge.
5. Bank x at T8 is “Don’t Care” if A10 is HIGH at T8.
6. D
these times.
t
OUT
t
RCD
RAS
NOP
n = data-out from column n.
T2
1
t
CH
t
CL
t
WRITE
Bank x
Note 4
IS
Col n
t
WPRES
T3
t
t
IH
DQSS (NOM)
2
86
t
DS
NOP
T4
D
t
256Mb: x16, x32 Mobile LPDDR SDRAM
b
DH
IN
t
WPRE
1
T4n
Micron Technology, Inc. reserves the right to change products or specifications without notice.
t
DQSL
NOP
T5
t
1
DQSH
T5n
t
WPST
NOP
T6
1
Don’t Care
© 2008 Micron Technology, Inc. All rights reserved.
Auto Precharge
t
NOP
WR
T7
1
Transitioning Data
One bank
All banks
Bank x
T8
PRE
3
5
t
RP