MT46H8M32LFB5-6:H Micron Technology Inc, MT46H8M32LFB5-6:H Datasheet - Page 94

• Manufacturer Part Number: MT46H8M32LFB5-6:H
• Description: IC SDRAM 256MB 166MHZ 90VFBGA
• Manufacturer: Micron Technology Inc
• Series: -r
• Type: DDR SDRAMr

Specifications of MT46H8M32LFB5-6:H

• Format - Memory: RAM
• Memory Type: Mobile DDR SDRAM
• Memory Size: 256M (8Mx32)
• Speed: 166MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 90-VFBGA
• Organization: 8Mx32
• Density: 256Mb
• Address Bus: 14b
• Access Time (max): 6.5/5ns
• Maximum Clock Rate: 166MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: VFBGA
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 1.95V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 120mA
• Pin Count: 90
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Revision History
Rev. I, Production – 09/10
Rev. H, Production – 11/09
Rev. G, Production – 09/09
Rev. F, Production – 4/09
Rev. E, Production – 3/09
Rev. D, Production – 02/09
Rev. C, Production – 01/09
Rev. B, Preliminary – 10/08
PDF: 09005aef834bf85b
256mb_mobile_ddr_sdram_t36n.pdf - Rev. I 09/10 EN
• Select Idd specifications were tightened for both x16 and x32 configurations
• Corrected seating plane values on package dimension drawings from 0.12 to 0.1.
• New format release.
• Table 9, Electrical Characteristics and Recommended AC Operating Conditions: Add-
• SELF REFRESH section: Added a second paragraph.
• Figure 49, Self Refresh Mode: Added
• Table 6, I
• Table 9, Electrical Characteristics and Recommended AC Operating Condition: Upda-
• Figure 15, Initialize and Load Mode Registers: Updated
• Figure 16, Alternate Initialization with CKE LOW: Updated
• Table 7, I
• Updated document status to Production.
• Initialization: Updated description for item 1.
• Updated document status to Preliminary.
• Options, page 1: Changed plastic “green” package marking for 60-ball and 90-ball
• Tables 6 and 7, I
• Changed
• Table 3, Absolute Maximum Ratings: Changed values for V
• Table 9, Electrical Characteristics and Recommended AC Operating Conditions:
ed a note to the
ues), I
ted note 18.
110mA.
VFBGA.
for the x16; changed the I
Changed values for
and
t
DS
DD4R
F
DD
DD
-6 MIN;
t
RFC (MIN) for all speed grades.
, and I
Specifications and Conditions (x16): Tightened x16 I
Specifications and Conditions (x32): Relaxed I
t
DD
CKE symbol.
DD4W
t
IS
Specifications and Conditions: Changed I
t
F
AC(3) -75 MIN;
-6 MIN;
values for all speed grades.
DD5
94
condition for the x16 and x32.
t
DQSCK MAX;
256Mb: x16, x32 Mobile LPDDR SDRAM
t
AC (MAX) for -5;
t
Micron Technology, Inc. reserves the right to change products or specifications without notice.
CKE line.
t
HZ, CL = 3, MAX.
t
DQSCK,CL = 3, -75 MIN;
DD5
DD
© 2008 Micron Technology, Inc. All rights reserved.
DD5
/V
values from 100mA to
Revision History
DDQ
DD0
for all speed grades
(MIN) and V
(-5 and -54 val-
t
DH
IN
.
F