MT46H8M32LFB5-6:H Micron Technology Inc, MT46H8M32LFB5-6:H Datasheet - Page 24

• Manufacturer Part Number: MT46H8M32LFB5-6:H
• Description: IC SDRAM 256MB 166MHZ 90VFBGA
• Manufacturer: Micron Technology Inc
• Series: -r
• Type: DDR SDRAMr

Specifications of MT46H8M32LFB5-6:H

• Format - Memory: RAM
• Memory Type: Mobile DDR SDRAM
• Memory Size: 256M (8Mx32)
• Speed: 166MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 90-VFBGA
• Organization: 8Mx32
• Density: 256Mb
• Address Bus: 14b
• Access Time (max): 6.5/5ns
• Maximum Clock Rate: 166MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: VFBGA
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 1.95V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 120mA
• Pin Count: 90
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Electrical Specifications – AC Operating Conditions
Table 9: Electrical Characteristics and Recommended AC Operating Conditions
Notes 1–9 apply to all parameters in this table; V
PDF: 09005aef834bf85b
256mb_mobile_ddr_sdram_t36n.pdf - Rev. I 09/10 EN
Parameter
Access window of
DQ from CK/CK#
Clock cycle time
CK high-level width
CK low-level width
CKE minimum pulse width
(high and low)
Auto precharge write recov-
ery + precharge time
DQ and DM input
hold time relative
to DQS
DQ and DM input
hold time relative
to DQS
DQ and DM input
setup time relative
to DQ
DQ and DM input
setup time relative
to DQS
DQ and DM input pulse
width (for each input)
Access window of
DQS from CK/CK#
DQS input high pulse width
DQS input low pulse width
DQS–DQ skew, DQS to last
DQ valid, per group, per ac-
cess
WRITE command to first DQS
latching transition
DQS falling edge from CK
rising – hold time
DQS falling edge to CK ris-
ing – setup time
Data valid output window
CL = 3
CL = 2
CL = 3
CL = 2
CL = 3
CL = 2
slew
slow
slew
slew
slow
slew
rate
rate
rate
rate
fast
fast
Symbol
t
t
t
DQSCK
t
t
t
DQSH
DQSQ
DVW
DIPW
t
DQSL
DQSS
t
t
t
t
t
t
t
t
t
DAL
DSH
t
CKE
t
DH
DH
DSS
DS
DS
AC
CH
CK
CL
f
s
f
s
Min
0.45
0.45
0.48
0.58
0.48
0.58
0.75
t
2.0
2.0
1.8
2.0
2.0
0.4
0.4
0.2
0.2
12
QH -
5
1
–
–
-5
Electrical Specifications – AC Operating Conditions
t
DD
DQSQ
Max
0.55
0.55
1.25
/V
5.0
6.5
5.0
6.5
0.6
0.6
0.4
–
–
–
–
–
–
–
–
–
–
–
DDQ
= 1.70–1.95V
Min
0.45
0.45
0.54
0.64
0.54
0.64
0.75
t
2.0
2.0
5.4
1.8
2.0
2.0
0.4
0.4
0.2
0.2
12
QH -
24
1
–
–
-54
t
256Mb: x16, x32 Mobile LPDDR SDRAM
DQSQ
Max
0.55
0.55
0.45
1.25
5.0
6.5
5.0
6.5
0.6
0.6
–
–
–
–
–
–
–
–
–
–
–
Micron Technology, Inc. reserves the right to change products or specifications without notice.
Min
0.45
0.45
0.35
0.35
0.75
t
2.0
2.0
0.6
0.7
0.6
0.7
1.8
2.0
2.0
0.2
0.2
12
QH -
6
1
–
–
-6
t
DQSQ
Max
0.55
0.55
1.25
5.0
6.5
5.0
6.5
0.6
0.6
0.5
–
–
–
–
–
–
–
–
–
–
–
Min
0.45
0.45
0.75
t
2.0
2.0
7.5
0.8
0.9
0.8
0.9
1.8
2.0
2.0
0.4
0.4
0.2
0.2
12
QH -
1
–
–
© 2008 Micron Technology, Inc. All rights reserved.
-75
t
DQSQ
Max
0.55
0.55
1.25
6.0
6.5
6.0
6.5
0.6
0.6
0.6
–
–
–
–
–
–
–
–
–
–
–
Unit
t
t
t
t
t
t
t
t
ns
ns
ns
ns
ns
ns
ns
ns
CK
CK
CK
CK
CK
CK
CK
CK
Notes
13, 14,
13, 14,
13, 17
10
11
12
15
15
16
17