MT46H8M32LFB5-6:H Micron Technology Inc, MT46H8M32LFB5-6:H Datasheet - Page 8

• Manufacturer Part Number: MT46H8M32LFB5-6:H
• Description: IC SDRAM 256MB 166MHZ 90VFBGA
• Manufacturer: Micron Technology Inc
• Series: -r
• Type: DDR SDRAMr

Specifications of MT46H8M32LFB5-6:H

• Format - Memory: RAM
• Memory Type: Mobile DDR SDRAM
• Memory Size: 256M (8Mx32)
• Speed: 166MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 90-VFBGA
• Organization: 8Mx32
• Density: 256Mb
• Address Bus: 14b
• Access Time (max): 6.5/5ns
• Maximum Clock Rate: 166MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: VFBGA
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 1.95V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 120mA
• Pin Count: 90
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

General Description
PDF: 09005aef834bf85b
256mb_mobile_ddr_sdram_t36n.pdf - Rev. I 09/10 EN
The 256Mb Mobile DDR SDRAM is a high-speed CMOS, dynamic random-access mem-
ory containing 268,435,456 bits. It is internally configured as a quad-bank DRAM. Each
of the x16’s 67,108,864-bit banks is organized as 8192 rows by 512 columns by 16 bits.
Each of the x32’s 67,108,864-bit banks is organized as 4096 rows by 512 columns by 32
bits. In the reduced page-size (LG) option, each of the x32’s 67,108,864-bit banks are
organized as 8192 rows by 256 columns by 32 bits.
Note:
1. Throughout this data sheet, various figures and text refer to DQs as “DQ.” DQ should
be interpreted as any and all DQ collectively, unless specifically stated otherwise. Addi-
tionally, the x16 is divided into 2 bytes: the lower byte and the upper byte. For the lower
byte (DQ[7:0]), DM refers to LDM and DQS refers to LDQS. For the upper byte
(DQ[15:8]), DM refers to UDM and DQS refers to UDQS. The x32 is divided into 4 bytes.
For DQ[7:0], DM refers to DM0 and DQS refers to DQS0. For DQ[15:8], DM refers to
DM1 and DQS refers to DQS1. For DQ[23:16], DM refers to DM2 and DQS refers to
DQS2. For DQ[31:24], DM refers to DM3 and DQS refers to DQS3.
2. Complete functionality is described throughout the document; any page or diagram
may have been simplified to convey a topic and may not be inclusive of all requirements.
3. Any specific requirement takes precedence over a general statement.
8
256Mb: x16, x32 Mobile LPDDR SDRAM
Micron Technology, Inc. reserves the right to change products or specifications without notice.
General Description
© 2008 Micron Technology, Inc. All rights reserved.