MT54V512H18E Micron Semiconductor Products, Inc., MT54V512H18E Datasheet - Page 10

• Manufacturer Part Number: MT54V512H18E
• Description: 9Mb QDR SRAM, 2.5V Vdd, HSTL , 4-Word Burst,
• Manufacturer: Micron Semiconductor Products, Inc.

Table 8:
Notes appear following parameter tables; 0°C £ T
Table 9:
Note 14; notes appear following parameter tables
Table 10: Thermal Resistance
Note 14; notes appear following parameter tables
512K x 18, 2.5V V
MT54V512H18E_16_A.fm - Rev 10/02
DESCRIPTION
DESCRIPTION
DESCRIPTION
Operating Supply
Current: DDR
Standby Supply
Current: NOP
Stop Clock Current
Output Supply
Current: DDR
(Information only)
Address/Control Input Capacitance
Output Capacitance (D, Q)
Clock Capacitance
Junction to Ambient
(Airflow of 1m/s)
Junction to Case (Top)
Junction to Balls (Bottom)
DD
, HSTL, QDRb4 SRAM
I
Capacitance
DD
Operating Conditions And Maximum Limits
Cycle time
Cycle time = 0; Input Static
All inputs £ V
All addresses/data static
t
KHKH =
Device in NOP state;
Outputs open
CONDITIONS
Soldered on a 4.25 x 1.125 inch, 4-layer,
C
L
³
t
= 15pF
KHKH (MIN);
t
KHKH (MIN);
IL
or
printed circuit board
³
T
CONDITIONS
V
A
IH
= 25ºC; f = 1 MHz
CONDITIONS
A
;
£ +70°C; V
0.16µm Process
SYM
I
I
DD
I
SB
I
10
DD
SB
DD
1
Q
= MAX unless otherwise noted
2.5V V
Micron Technology, Inc., reserves the right to change products or specifications without notice.
TYP
TBD
400
150
SYMBOL
SYMBOL
C
C
C
q
CK
q
q
550
250
O
75
34
I
-6
JA
JC
JB
DD
, HSTL, QDRb4 SRAM
MAX
-7.5
500
225
75
27
TYP
4
6
5
TYP
25
10
12
375
175
-10
75
20
MAX
UNITS
512K x 18
5
7
6
ºC/W
ºC/W
ºC/W
UNITS
©2002, Micron Technology Inc.
mA
mA
mA
mA
ADVANCE
9, 10, 11
UNITS
NOTES
NOTES
10, 12
pF
pF
pF
15
16
10
13