MT54V512H18E Micron Semiconductor Products, Inc., MT54V512H18E Datasheet - Page 4

• Manufacturer Part Number: MT54V512H18E
• Description: 9Mb QDR SRAM, 2.5V Vdd, HSTL , 4-Word Burst,
• Manufacturer: Micron Semiconductor Products, Inc.

Table 2:
NOTE:
512K x 18, 2.5V V
MT54V512H18E_16_A.fm - Rev 10/02
1. Expansion address: 2A for 144Mb
2. Expansion address: 3A for 36Mb
3. Expansion address: 9A for 18Mb
4. Expansion address: 10A for 72Mb
M
A
B
C
D
G
H
K
N
R
E
F
L
P
J
DNU
TDO
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
DD
1
, HSTL, QDRb4 SRAM
Ball Assignment (Top View)
165-Ball FBGA
V
SS
V
D11
Q12
D13
Q15
D17
TCK
Q9
NC
NC
NC
NC
NC
NC
REF
2
/SA
1
NC/SA
V
Q10
Q11
Q13
Q14
Q16
Q17
D10
D12
D14
D15
D16
D9
DD
SA
3
Q
2
V
V
V
V
V
V
V
W#
V
V
V
V
DD
DD
DD
DD
DD
DD
DD
SA
SA
SA
4
SS
SS
SS
SS
Q
Q
Q
Q
Q
Q
Q
BW1#
V
V
V
V
V
V
V
V
V
NC
SA
SA
SA
SA
0.16µm Process
5
DD
DD
DD
DD
DD
SS
SS
SS
SS
4
V
V
V
V
V
V
V
V
V
K#
NC
SA
C#
6
K
C
SS
SS
SS
SS
SS
SS
SS
SS
SS
2.5V V
BW0#
Micron Technology, Inc., reserves the right to change products or specifications without notice.
V
V
V
V
V
V
V
V
V
NC
SA
SA
SA
SA
7
DD
DD
DD
DD
DD
SS
SS
SS
SS
V
V
V
V
V
V
V
DD
V
V
V
V
DD
DD
DD
DD
DD
DD
DD
R#
SA
SA
SA
8
SS
SS
SS
SS
Q
Q
Q
Q
Q
Q
Q
, HSTL, QDRb4 SRAM
NC/SA
V
NC
NC
NC
NC
NC
NC
DD
NC
NC
NC
NC
NC
NC
SA
9
Q
3
V
SS
V
TMS
512K x 18
NC
Q7
NC
NC
NC
Q4
NC
Q1
NC
10
D6
D3
D0
REF
/SA
©2002, Micron Technology Inc.
4
ADVANCE
DNU
TDI
Q8
Q6
Q5
ZQ
Q3
Q2
Q0
11
D8
D7
D5
D4
D2
D1