MT54V512H18E Micron Semiconductor Products, Inc., MT54V512H18E Datasheet - Page 11

• Manufacturer Part Number: MT54V512H18E
• Description: 9Mb QDR SRAM, 2.5V Vdd, HSTL , 4-Word Burst,
• Manufacturer: Micron Semiconductor Products, Inc.

Table 11: AC Electrical Characteristics And Recommended Operating
Notes 14, 17-19; notes appear following parameter tables; 0°C £ T
512K x 18, 2.5V V
MT54V512H18E_16_A.fm - Rev 10/02
DESCRIPTION
Clock
Clock cycle time (K, K#, C, C#)
Clock HIGH time (K, K#, C, C#)
Clock LOW time (K, K#, C, C#)
Clock to clock# (K­®K#­,
C­®C#­) at
Clock# to clock (K­®K#­,
C­®C#­) at
Clock to data clock (K­®C­,
K#­®C#­)
Output Times
C, C# HIGH to output valid
C, C# HIGH to output hold
C HIGH to output High-Z
C HIGH to output Low-Z
Setup Times
Address valid to K rising edge
Control inputs valid to K rising
edge
Data-in valid to K, K# rising
edge
Hold Times
K rising edge to address hold
K rising edge to control inputs
hold
K, K# rising edge to data-in hold
DD
, HSTL, QDRb4 SRAM
t
t
KHKH minimum
KHKH minimum
Conditions
t
t
t
t
t
t
t
t
t
KHK#H
K#HKH
t
t
CHQX1
t
t
t
t
t
KHKH
CHQV
CHQX
AVKH
DVKH
KHAX
KHDX
SYM
KHCH
CHQZ
KHKL
KLKH
IVKH
KHIX
MIN
6.0
2.4
2.4
2.7
2.7
0.0
1.2
1.2
0.7
0.7
0.7
0.7
0.7
0.7
0.16µm Process
-6
MAX
2.0
2.5
2.5
11
A
MIN
£ +70°C; +2.4V £ V
0.00
7.5
3.0
3.0
3.4
3.4
1.2
1.2
0.8
0.8
0.8
0.8
0.8
0.8
2.5V V
Micron Technology, Inc., reserves the right to change products or specifications without notice.
-7.5
MAX
2.5
3.0
3.0
DD
, HSTL, QDRb4 SRAM
DD
MIN
3.5
3.5
4.6
4.6
0.0
1.2
1.2
1.0
1.0
1.0
1.0
1.0
1.0
10
£ +2.6V
-10
MAX
3.0
3.0
3.0
512K x 18
UNITS
©2002, Micron Technology Inc.
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ADVANCE
NOTES
20, 21
20, 21
20, 21
20, 21
22
22