MT54V512H18E Micron Semiconductor Products, Inc., MT54V512H18E Datasheet - Page 6

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MT54V512H18E

Manufacturer Part Number
MT54V512H18E
Description
9Mb QDR SRAM, 2.5V Vdd, HSTL , 4-Word Burst,
Manufacturer
Micron Semiconductor Products, Inc.
Datasheet
Table 3:
512K x 18, 2.5V V
MT54V512H18E_16_A.fm - Rev 10/02
SYMBOL
NC/SA
NC
DD
, HSTL, QDRb4 SRAM
Ball Descriptions (Continued)
TYPE
No Connect: These signals are not internally connected and may be connected to ground to
improve package heat dissipation.
These balls are reserved for higher-order address bits, respectively.
0.16µm Process
6
DESCRIPTION
2.5V V
Micron Technology, Inc., reserves the right to change products or specifications without notice.
DD
, HSTL, QDRb4 SRAM
512K x 18
©2002, Micron Technology Inc.
ADVANCE

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