C8051F331-GM Silicon Laboratories Inc, C8051F331-GM Datasheet - Page 101
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C8051F331-GM
Manufacturer Part Number
C8051F331-GM
Description
IC 8051 MCU 8K FLASH 20QFN
Manufacturer
Silicon Laboratories Inc
Series
C8051F33xr
Specifications of C8051F331-GM
Program Memory Type
FLASH
Program Memory Size
8KB (8K x 8)
Package / Case
20-QFN
Core Processor
8051
Core Size
8-Bit
Speed
25MHz
Connectivity
SMBus (2-Wire/I²C), SPI, UART/USART
Peripherals
POR, PWM, WDT
Number Of I /o
17
Ram Size
768 x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 3.6 V
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Processor Series
C8051F3x
Core
8051
Data Bus Width
8 bit
Data Ram Size
768 B
Interface Type
I2C/SMBus/SPI/UART
Maximum Clock Frequency
25 MHz
Number Of Programmable I/os
17
Number Of Timers
4
Operating Supply Voltage
2.7 V to 3.6 V
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
3rd Party Development Tools
KSK-SL-TOOLSTICK, PK51, CA51, A51, ULINK2
Development Tools By Supplier
C8051F330DK
Minimum Operating Temperature
- 40 C
On-chip Adc
10 bit, 16 Channel
No. Of I/o's
17
Ram Memory Size
768Byte
Cpu Speed
25MHz
No. Of Timers
4
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
For Use With
770-1006 - ISP 4PORT FOR SILABS C8051F MCU336-1451 - ADAPTER PROGRAM TOOLSTICK F330336-1264 - DEV KIT FOR C8051F330/F331
Eeprom Size
-
Data Converters
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
336-1265
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
C8051F331-GM
Manufacturer:
SiliconL
Quantity:
1 630
Part Number:
C8051F331-GM
Manufacturer:
SILICON LABS/芯科
Quantity:
20 000
Part Number:
C8051F331-GMR
Manufacturer:
SILICON LABS/芯科
Quantity:
20 000
C8051F330/1/2/3/4/5
11.1.3. Flash Write Procedure
Flash bytes are programmed by software with the following sequence:
Steps 5–7 must be repeated for each byte to be written. After Flash writes are complete, PSWE should be
cleared so that MOVX instructions do not target program memory.
Table 11.1. Flash Electrical Characteristics
V
11.2. Non-volatile Data Storage
The Flash memory can be used for non-volatile data storage as well as program code. This allows data
such as calibration coefficients to be calculated and stored at run time. Data is written using the MOVX
write instruction and read using the MOVC instruction. Note: MOVX read instructions always target XRAM.
104
Flash Size
Endurance
Erase Cycle Time
Write Cycle Time
*Note: 512 bytes at addresses 0x1E00 to 0x1FFF are reserved.
DD
= 2.7 to 3.6 V;
Parameter
Step 1. Disable interrupts (recommended).
Step 2. Erase the 512-byte Flash page containing the target location, as described in
Step 3. Set the PSWE bit (register PSCTL).
Step 4. Clear the PSEE bit (register PSCTL).
Step 5. Write the first key code to FLKEY: 0xA5.
Step 6. Write the second key code to FLKEY: 0xF1.
Step 7. Using the MOVX instruction, write a single data byte to the desired location within the 512-
Step 8. Clear the PSWE bit.
11.1.2
byte sector.
–
40 to +85 ºC unless otherwise specified.
.
C8051F330/1
C8051F332/3
C8051F334/5
25 MHz System Clock
25 MHz System Clock
Conditions
Rev. 1.7
8192
4096
2048
20 k
Min
10
40
*
100 k
Typ
15
55
—
—
—
Max
20
70
—
—
—
—
Erase/Write
Section
Units
bytes
ms
µs