C8051F331-GM Silicon Laboratories Inc, C8051F331-GM Datasheet - Page 60
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C8051F331-GM
Manufacturer Part Number
C8051F331-GM
Description
IC 8051 MCU 8K FLASH 20QFN
Manufacturer
Silicon Laboratories Inc
Series
C8051F33xr
Specifications of C8051F331-GM
Program Memory Type
FLASH
Program Memory Size
8KB (8K x 8)
Package / Case
20-QFN
Core Processor
8051
Core Size
8-Bit
Speed
25MHz
Connectivity
SMBus (2-Wire/I²C), SPI, UART/USART
Peripherals
POR, PWM, WDT
Number Of I /o
17
Ram Size
768 x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 3.6 V
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Processor Series
C8051F3x
Core
8051
Data Bus Width
8 bit
Data Ram Size
768 B
Interface Type
I2C/SMBus/SPI/UART
Maximum Clock Frequency
25 MHz
Number Of Programmable I/os
17
Number Of Timers
4
Operating Supply Voltage
2.7 V to 3.6 V
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
3rd Party Development Tools
KSK-SL-TOOLSTICK, PK51, CA51, A51, ULINK2
Development Tools By Supplier
C8051F330DK
Minimum Operating Temperature
- 40 C
On-chip Adc
10 bit, 16 Channel
No. Of I/o's
17
Ram Memory Size
768Byte
Cpu Speed
25MHz
No. Of Timers
4
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
For Use With
770-1006 - ISP 4PORT FOR SILABS C8051F MCU336-1451 - ADAPTER PROGRAM TOOLSTICK F330336-1264 - DEV KIT FOR C8051F330/F331
Eeprom Size
-
Data Converters
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
336-1265
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
C8051F331-GM
Manufacturer:
SiliconL
Quantity:
1 630
Part Number:
C8051F331-GM
Manufacturer:
SILICON LABS/芯科
Quantity:
20 000
Part Number:
C8051F331-GMR
Manufacturer:
SILICON LABS/芯科
Quantity:
20 000
Table 7.1. Voltage Reference Electrical Characteristics
V
Output Voltage
VREF Short-Circuit Current
VREF Temperature
Coefficient
Load Regulation
VREF Turn-on Time 1
VREF Turn-on Time 2
VREF Turn-on Time 3
Power Supply Rejection
Input Voltage Range
Input Current
ADC Bias Generator
Reference Bias Generator
DD
= 3.0 V; –40 to +85 °C unless otherwise specified.
Parameter
25 °C ambient
Load = 0 to 200 µA to AGND
4.7 µF tantalum, 0.1 µF ceramic
bypass
0.1 µF ceramic bypass
no bypass cap
Sample Rate = 200 ksps; VREF =
3.0 V
BIASE = ‘1’ or AD0EN = ‘1’ or
IOSCEN = ‘1’
REFBE = ‘1’ or TEMPE = ‘1’ or
IDA0EN = ‘1’
External Reference (REFBE = 0)
Internal Reference (REFBE = 1)
Power Specifications
Conditions
Rev. 1.7
C8051F330/1/2/3/4/5
2.38
Min
—
—
—
—
—
—
—
—
—
—
0
2.44
Typ
140
100
0.5
15
20
10
12
40
—
—
2
Max
2.50
V
10
—
—
—
—
—
—
—
—
—
DD
ppm/µA
ppm/°C
ppm/V
Units
mA
ms
µA
µA
µA
µs
µs
V
V
63