MC9S08DZ60ACLF Freescale Semiconductor, MC9S08DZ60ACLF Datasheet - Page 70

• Manufacturer Part Number: MC9S08DZ60ACLF
• Description: IC MCU 60K FLASH 4K RAM 48-LQFP
• Manufacturer: Freescale Semiconductor
• Series: HCS08r

Specifications of MC9S08DZ60ACLF

• Core Processor: HCS08
• Core Size: 8-Bit
• Speed: 40MHz
• Connectivity: CAN, I²C, LIN, SCI, SPI
• Peripherals: LVD, POR, PWM, WDT
• Number Of I /o: 39
• Program Memory Size: 60KB (60K x 8)
• Program Memory Type: FLASH
• Eeprom Size: 2K x 8
• Ram Size: 4K x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 5.5 V
• Data Converters: A/D 16x12b
• Oscillator Type: External
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 48-LQFP
• Processor Series: S08DZ
• Core: HCS08
• Data Bus Width: 8 bit
• Data Ram Size: 4 KB
• Interface Type: CAN, I2C, SCI, SPI
• Maximum Clock Frequency: 40 MHz
• Number Of Programmable I/os: 53
• Number Of Timers: 2
• Operating Supply Voltage: 5.5 V
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• 3rd Party Development Tools: EWS08
• Development Tools By Supplier: DEMO9S08DZ60
• Minimum Operating Temperature: - 40 C
• On-chip Adc: 12 bit, 24 Channel
• For Use With: DEMO9S08DZ60 - BOARD DEMOEVB9S08DZ60 - BOARD EVAL FOR 9S08DZ60
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Chapter 4 Memory
a burst program command is issued, the charge pump is enabled and remains enabled after completion of
the burst program operation if these two conditions are met:
The first byte of a series of sequential bytes being programmed in burst mode will take the same amount
of time to program as a byte programmed in standard mode. Subsequent bytes will program in the burst
program time provided that the conditions above are met. If the next sequential address is the beginning of
a new row, the program time for that byte will be the standard time instead of the burst time. This is because
the high voltage to the array must be disabled and then enabled again. If a new burst command has not been
queued before the current command completes, then the charge pump will be disabled and high voltage
removed from the array.
A flowchart to execute the burst program operation is shown in
70
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The next burst program command sequence has begun before the FCCF bit is set.
The next sequential address selects a byte on the same burst block as the current byte being
programmed. A burst block in this FLASH memory consists of 32 bytes. A new burst block begins
at each 32-byte address boundary.
MC9S08DZ128 Series Data Sheet, Rev. 1
Figure
4-12.
Freescale Semiconductor