MC908GR16ACFAE Freescale Semiconductor, MC908GR16ACFAE Datasheet - Page 39

• Manufacturer Part Number: MC908GR16ACFAE
• Description: IC MCU 16K FLASH 8MHZ 48-LQFP
• Manufacturer: Freescale Semiconductor
• Series: HC08r

Specifications of MC908GR16ACFAE

• Core Processor: HC08
• Core Size: 8-Bit
• Speed: 8MHz
• Connectivity: LIN, SCI, SPI
• Peripherals: LVD, POR, PWM
• Number Of I /o: 37
• Program Memory Size: 16KB (16K x 8)
• Program Memory Type: FLASH
• Ram Size: 1K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 5.5 V
• Data Converters: A/D 8x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 48-LQFP
• Controller Family/series: HC08
• No. Of I/o's: 37
• Ram Memory Size: 1KB
• Cpu Speed: 8MHz
• No. Of Timers: 2
• Embedded Interface Type: SCI, SPI
• Rohs Compliant: Yes
• Processor Series: HC08GR
• Core: HC08
• Data Bus Width: 8 bit
• Data Ram Size: 1 KB
• Interface Type: ESCI, SPI
• Maximum Clock Frequency: 8 MHz
• Number Of Programmable I/os: 37
• Number Of Timers: 4
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• Development Tools By Supplier: FSICEBASE, DEMO908GZ60E, M68CBL05CE, M68EML08GPGTE
• Minimum Operating Temperature: - 40 C
• On-chip Adc: 10 bit, 8 Channel
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Lead Free Status / Rohs Status: Details

2.6.3 FLASH Page Erase Operation
Use this step-by-step procedure to erase a page (64 bytes) of FLASH memory. A page consists of 64
consecutive bytes starting from addresses $XX00, $XX40, $XX80, or $XXC0. The 36-byte user interrupt
vectors area also forms a page. Any FLASH memory page can be erased alone.
In applications that need more than 1000 program/erase cycles, use the 4-ms page erase specification
to get improved long-term reliability. Any application can use this 4-ms page erase specification.
However, in applications where a FLASH location will be erased and reprogrammed less than 1000 times,
and speed is important, use the 1-ms page erase specification to get a shorter cycle time.
2.6.4 FLASH Mass Erase Operation
Use this step-by-step procedure to erase entire FLASH memory:
1. When in monitor mode, with security sequence failed (see
Freescale Semiconductor
10. After a time, t
10. After a time, t
of any FLASH address.
1. Set the ERASE bit, and clear the MASS bit in the FLASH control register.
2. Read the FLASH block protect register.
3. Write any data to any FLASH location within the page address range of the block to be erased.
4. Wait for a time, t
5. Set the HVEN bit.
6. Wait for a time, t
7. Clear the ERASE bit.
8. Wait for a time, t
9. Clear the HVEN bit.
1. Set both the ERASE bit, and the MASS bit in the FLASH control register.
2. Read the FLASH block protect register.
3. Write any data to any FLASH address
4. Wait for a time, t
5. Set the HVEN bit.
6. Wait for a time, t
7. Clear the ERASE and MASS bits.
8. Wait for a time, t
9. Clear the HVEN bit.
Programming and erasing of FLASH locations cannot be performed by
code being executed from FLASH memory. While these operations must be
performed in the order shown, other unrelated operations may occur
between the steps.
Mass erase is disabled whenever any block is protected (FLBPR does not
equal $FF).
RCV
RCV
NVS
Erase
NVH
NVS
MErase
NVHL
(typical 1 µs), the memory can be accessed in read mode again.
(typical 1 µs), the memory can be accessed in read mode again.
(minimum 10 µs)
(minimum 10 µs)
(minimum 5 µs)
(minimum 1 ms or 4 ms)
(minimum 100 µs)
(minimum 4 ms)
MC68HC908GR16A Data Sheet, Rev. 1.0
(1)
within the FLASH memory address range.
NOTE
NOTE
19.3.2
Security), write to the FLASH block protect register instead
FLASH Memory (FLASH)
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