MC9S08EL16CTJ Freescale Semiconductor, MC9S08EL16CTJ Datasheet - Page 331

• Manufacturer Part Number: MC9S08EL16CTJ
• Description: MCU 16KB FLASH SLIC 20TSSOP
• Manufacturer: Freescale Semiconductor
• Series: HCS08r

Specifications of MC9S08EL16CTJ

• Core Processor: HCS08
• Core Size: 8-Bit
• Speed: 40MHz
• Connectivity: I²C, LIN, SCI, SPI
• Peripherals: LVD, POR, PWM, WDT
• Number Of I /o: 16
• Program Memory Size: 16KB (16K x 8)
• Program Memory Type: FLASH
• Eeprom Size: 512 x 8
• Ram Size: 1K x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 5.5 V
• Data Converters: A/D 12x10b
• Oscillator Type: External
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 20-TSSOP
• Processor Series: S08EL
• Core: HCS08
• Data Bus Width: 8 bit
• Data Ram Size: 1 KB
• Interface Type: SCI, SPI, I2C, SLIC
• Maximum Clock Frequency: 200 KHz
• Number Of Programmable I/os: 16
• Number Of Timers: 2
• Operating Supply Voltage: 5.5 V
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• 3rd Party Development Tools: EWS08
• Development Tools By Supplier: DEMO9S08EL32AUTO, DEMO9S08EL32
• Minimum Operating Temperature: - 40 C
• On-chip Adc: 10 bit, 12 Channel
• For Use With: DEMO9S08EL32 - BOARD DEMO FOR 9S08 EL MCUDEMO9S08EL32AUTO - DEMO BOARD EL32 AUTO
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

The average chip-junction temperature (T
where:
For most applications, P
(if P
Solving
where K is a constant pertaining to the particular part. K can be determined from equation 3 by measuring
P
solving
A.5
Although damage from electrostatic discharge (ESD) is much less common on these devices than on early
CMOS circuits, normal handling precautions should be used to avoid exposure to static discharge.
Qualification tests are performed to ensure that these devices can withstand exposure to reasonable levels
of static without suffering any permanent damage.
All ESD testing is in conformity with AEC-Q100 Stress Test Qualification for Automotive Grade
Integrated Circuits. During the device qualification ESD stresses were performed for the human body
model (HBM) and the charge device model (CDM).
A device is defined as a failure if after exposure to ESD pulses the device no longer meets the device
specification. Complete DC parametric and functional testing is performed per the applicable device
specification at room temperature followed by hot temperature, unless specified otherwise in the device
specification.
Freescale Semiconductor
D
(at equilibrium) for a known T
I/O
T
θ
P
P
P
JA
D
int
I/O
A
1
2
is neglected) is:
Equation A-1
= Ambient temperature, °C
= P
Equation A-1
= Package thermal resistance, junction-to-ambient, °C/W
= I
Junction temperature is a function of die size, on-chip power dissipation, package thermal resistance,
mounting site (board) temperature, ambient temperature, air flow, power dissipation of other components on
the board, and board thermal resistance.
Junction to Ambient Natural Convection
= Power dissipation on input and output pins — user determined
ESD Protection and Latch-Up Immunity
int
DD
+ P
× V
I/O
DD
, Watts — chip internal power
and
and
I/O
MC9S08EL32 Series and MC9S08SL16 Series Data Sheet, Rev. 3
Equation A-2
Equation A-2
<< P
K = P
int
A
and can be neglected. An approximate relationship between P
. Using this value of K, the values of P
D
P
T
× (T
D
J
iteratively for any value of T
for K gives:
= K ÷ (T
= T
J
A
) in °C can be obtained from:
+ 273°C) + θ
A
+ (P
J
D
+ 273°C)
× θ
JA
JA
)
× (P
D
)
2
A
.
D
Appendix A Electrical Characteristics
and T
J
can be obtained by
D
Eqn. A-1
Eqn. A-2
Eqn. A-3
and T
333
J