MC9S08EL16CTJ Freescale Semiconductor, MC9S08EL16CTJ Datasheet - Page 351

MCU 16KB FLASH SLIC 20TSSOP

MC9S08EL16CTJ

Manufacturer Part Number
MC9S08EL16CTJ
Description
MCU 16KB FLASH SLIC 20TSSOP
Manufacturer
Freescale Semiconductor
Series
HCS08r
Datasheet

Specifications of MC9S08EL16CTJ

Core Processor
HCS08
Core Size
8-Bit
Speed
40MHz
Connectivity
I²C, LIN, SCI, SPI
Peripherals
LVD, POR, PWM, WDT
Number Of I /o
16
Program Memory Size
16KB (16K x 8)
Program Memory Type
FLASH
Eeprom Size
512 x 8
Ram Size
1K x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 5.5 V
Data Converters
A/D 12x10b
Oscillator Type
External
Operating Temperature
-40°C ~ 85°C
Package / Case
20-TSSOP
Processor Series
S08EL
Core
HCS08
Data Bus Width
8 bit
Data Ram Size
1 KB
Interface Type
SCI, SPI, I2C, SLIC
Maximum Clock Frequency
200 KHz
Number Of Programmable I/os
16
Number Of Timers
2
Operating Supply Voltage
5.5 V
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
3rd Party Development Tools
EWS08
Development Tools By Supplier
DEMO9S08EL32AUTO, DEMO9S08EL32
Minimum Operating Temperature
- 40 C
On-chip Adc
10 bit, 12 Channel
For Use With
DEMO9S08EL32 - BOARD DEMO FOR 9S08 EL MCUDEMO9S08EL32AUTO - DEMO BOARD EL32 AUTO
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
A.14 EMC Performance
Electromagnetic compatibility (EMC) performance is highly dependant on the environment in which the
MCU resides. Board design and layout, circuit topology choices, location and characteristics of external
components as well as MCU software operation all play a significant role in EMC performance. The
system designer should consult Freescale applications notes such as AN2321, AN1050, AN1263,
AN2764, and AN1259 for advice and guidance specifically targeted at optimizing EMC performance.
A.14.1
Microcontroller radiated RF emissions are measured from 150 kHz to 1 GHz using the TEM/GTEM Cell
method in accordance with the IEC 61967-2 and SAE J1752/3 standards. The measurement is performed
with the microcontroller installed on a custom EMC evaluation board while running specialized EMC test
software. The radiated emissions from the microcontroller are measured in a TEM cell in two package
orientations (North and East).
The maximum radiated RF emissions of the tested configuration in all orientations are less than or equal
to the reported emissions levels.
Freescale Semiconductor
1
2
3
4
Radiated emissions,
electric field
Num
The frequency of this clock is controlled by a software setting.
These values are hardware state machine controlled. User code does not need to count cycles. This information supplied for
calculating approximate time to program and erase.
Typical endurance for Flash is based upon the intrinsic bit cell performance. For additional information on how Freescale
defines typical endurance, please refer to Engineering Bulletin EB619/D, Typical Endurance for Nonvolatile Memory.
Typical data retention values are based on intrinsic capability of the technology measured at high temperature and de-rated
to 25°C using the Arrhenius equation. For additional information on how Freescale Semiconductor defines typical data
retention, please refer to Engineering Bulletin EB618/D, Typical Data Retention for Nonvolatile Memory.
10
11
Parameter
C
C
C
Radiated Emissions
EEPROM Program/erase endurance
Data retention
T
T
T = 25°C
L
L
to T
to T
H
H
MC9S08EL32 Series and MC9S08SL16 Series Data Sheet, Rev. 3
= –40°C to + 0°C
= 0°C to + 125°C
Characteristic
4
V
Symbol
RE_TEM
Table A-17. Radiated Emissions, Electric Field
Table A-16. Flash Characteristics (continued)
package type
Conditions
V
T
28 TSSOP
A
DD
= +25
= 5.0V
3
o
C
Symbol
n
t
D_ret
EEPE
500 – 1000 MHz
150 – 500 MHz
0.15 – 50 MHz
50 – 150 MHz
Frequency
SAE Level
IEC Level
10,000
50,000
Min
15
4MHz crystal
20MHz bus
f
OSC
100,000
Typical
100
Appendix A Electrical Characteristics
/f
BUS
Max
Level
(Max)
−10
N/A
11
12
3
2
1
cycles
years
Unit
dBμV
Unit
353

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