PIC16C781T-I/SO Microchip Technology, PIC16C781T-I/SO Datasheet - Page 149

IC MCU CMOS 8BIT 1K 20MHZ 20SOIC

PIC16C781T-I/SO

Manufacturer Part Number
PIC16C781T-I/SO
Description
IC MCU CMOS 8BIT 1K 20MHZ 20SOIC
Manufacturer
Microchip Technology
Series
PIC® 16Cr

Specifications of PIC16C781T-I/SO

Core Processor
PIC
Core Size
8-Bit
Speed
20MHz
Peripherals
Brown-out Detect/Reset, POR, PWM, WDT
Number Of I /o
13
Program Memory Size
1.75KB (1K x 14)
Program Memory Type
OTP
Ram Size
128 x 8
Voltage - Supply (vcc/vdd)
4 V ~ 5.5 V
Data Converters
A/D 8x8b; D/A 1x8b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
20-SOIC (7.5mm Width)
For Use With
AC164028 - MODULE SKT PROMATEII 20SOIC/DIP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Connectivity
-
Other names
PIC16C781TI/SO
17.0
Absolute Maximum Ratings †
Ambient temperature under bias....................................................................................................... -55°C to +125°C
Storage temperature ......................................................................................................................... -65°C to +150°C
Voltage on any pin with respect to V
Voltage on V
Maximum voltage between AV
Maximum voltage between AV
Voltage on MCLR with respect to V
Voltage on RA4 with respect to Vss ...................................................................................................0.3 V to +10.5 V
Total power dissipation
Total power dissipation
Maximum current out of V
Maximum current into V
Input clamp current, I
Output clamp current, I
Maximum output current sunk by any I/O pin.................................................................................................... 25 mA
Maximum output current sourced by any I/O pin .............................................................................................. 25 mA
Maximum current sunk by PORTA and PORTB (combined)........................................................................... 200 mA
Maximum current sourced by PORTA and PORTB (combined....................................................................... 200 mA
† NOTICE: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at those or any other conditions above those
indicated in the operation listings of this specification is not implied. Exposure to maximum rating conditions for
extended periods may affect device reliability.
Note 1: Power dissipation is calculated as follows: P
2001 Microchip Technology Inc.
ELECTRICAL CHARACTERISTICS
DD
with respect to V
IK
(1)
(1)
OK
(V
DD
(PDIP, SOIC)............................................................................................................. 1.0 W
(SSOP) .................................................................................................................... 0.65 W
SS
I
(V
< 0 or V
pin ........................................................................................................................ 250 mA
O
pin ..................................................................................................................... 300 mA
DD
SS
< 0 or V
SS
and V
and V
I
SS
.......................................................................................................-0.3 to +7.5 V
SS
> V
................................................................................................ -0.3 V to +8.5 V
O
(except V
SS
DD
DD
> V
pins ............................................................................................... ± 0.3 V
.................................................................................................... ± 20 mA
pins............................................................................................... ± 0.3 V
DD
............................................................................................. ± 20 mA
DD
Preliminary
, MCLR and RA4) ................................... -0.3V to (V
DIS
= V
DD
x {I
DD
-
I
OH
} +
PIC16C781/782
{(V
DD
- V
OH
) x I
DS41171A-page 147
OH
} + (V
DD
+ 0.3 V)
OL
x I
OL
).

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