MC9S08DZ48AMLF Freescale Semiconductor, MC9S08DZ48AMLF Datasheet - Page 68
![MCU 8BIT 48K FLASH EE 48-LQFP](/photos/37/62/376254/lqfp-48_sml.jpg)
MC9S08DZ48AMLF
Manufacturer Part Number
MC9S08DZ48AMLF
Description
MCU 8BIT 48K FLASH EE 48-LQFP
Manufacturer
Freescale Semiconductor
Series
HCS08r
Datasheets
1.DEMO9S08DZ60.pdf
(416 pages)
2.EVB9S08DZ60.pdf
(4 pages)
3.MC9S08DZ48AMLF.pdf
(458 pages)
Specifications of MC9S08DZ48AMLF
Core Processor
HCS08
Core Size
8-Bit
Speed
40MHz
Connectivity
CAN, I²C, LIN, SCI, SPI
Peripherals
LVD, POR, PWM, WDT
Number Of I /o
39
Program Memory Size
48KB (48K x 8)
Program Memory Type
FLASH
Eeprom Size
1.5K x 8
Ram Size
3K x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 5.5 V
Data Converters
A/D 16x12b
Oscillator Type
External
Operating Temperature
-40°C ~ 125°C
Package / Case
48-LQFP
Processor Series
S08DZ
Core
HCS08
Data Bus Width
8 bit
Data Ram Size
3 KB
Interface Type
CAN, I2C, SCI, SPI
Number Of Programmable I/os
40
Number Of Timers
2
Operating Supply Voltage
5.5 V
Maximum Operating Temperature
+ 125 C
Mounting Style
SMD/SMT
3rd Party Development Tools
EWS08
Development Tools By Supplier
DEMO9S08DZ60
Minimum Operating Temperature
- 40 C
On-chip Adc
12 bit, 16 Channel
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MC9S08DZ48AMLF
Manufacturer:
Freescale Semiconductor
Quantity:
10 000
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Chapter 4 Memory
Table 4-12
of FCLK (f
of cycles of FCLK and as an absolute time for the case where t
shown include overhead for the command state machine and enabling and disabling of program and erase
voltages.
4.6.3
The FCDIV register must be initialized after any reset and any error flag is cleared before beginning
command execution. The command execution steps are:
68
1. Write a data value to an address in the FLASH or EEPROM array. The address and data
2. Write the command code for the desired command to FCMD. The six valid commands are blank
3. Write a 1 to the FCBEF bit in FSTAT to clear FCBEF and launch the command (including its
information from this write is latched into the FLASH and EEPROM interface. This write is a
required first step in any command sequence. For erase and blank check commands, the value of
the data is not important. For sector erase commands, the address can be any address in the sector
of FLASH or EEPROM to be erased. For mass erase and blank check commands, the address can
be any address in the FLASH or EEPROM memory. FLASH and EEPROM erase independently
of each other.
check (0x05), byte program (0x20), burst program (0x25), sector erase (0x40), mass erase (0x41),
and sector erase abort (0x47). The command code is latched into the command buffer.
address and data information).
A partial command sequence can be aborted manually by writing a 0 to FCBEF any time after the
write to the memory array and before writing the 1 that clears FCBEF and launches the complete
command. Aborting a command in this way sets the FACCERR access error flag which must be
cleared before starting a new command.
shows program and erase times. The bus clock frequency and FCDIV determine the frequency
FCLK
Program and Erase Command Execution
1
Before programming a particular byte in the FLASH or EEPROM, the
sector in which that particular byte resides must be erased by a mass or
sector erase operation. Reprogramming bits in an already programmed byte
without first performing an erase operation may disturb data stored in the
FLASH or EEPROM memory.
Excluding start/end overhead
). The time for one cycle of FCLK is t
Sector erase abort
Burst program
Byte program
Sector erase
Mass erase
Parameter
Table 4-12. Program and Erase Times
MC9S08DZ128 Series Data Sheet, Rev. 1
Cycles of FCLK
NOTE
20,000
4000
9
4
4
FCLK
= 1/f
FCLK
FCLK
Time if FCLK = 200 kHz
= 5 μs. Program and erase times
. The times are shown as a number
100 ms
20 μs
20 μs
20 ms
45 μs
1
1
Freescale Semiconductor
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